Radiation-emitting semiconductor element and method for producing the same
This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers ( 1 ). The semiconductor body has a first principal surface ( 3 ) and a second principal surface ( 4 ), with the radiation produced being emitted through the first principal surface ( 3 ) and with a reflector ( 6 ) being produced on the second principal surface ( 4 ). The invention also describes a production method for a semiconductor component pursuant to the invention. An interlayer ( 9 ) is first applied to a substrate ( 8 ), and a plurality of GaN layers ( 1 ) that constitute the semiconductor body of the component are then applied to this. The substrate ( 8 ) and the interlayer ( 9 ) are then detached and a reflector ( 6 ) is produced on a principal surface of the semiconductor body.
1 . Radiation-emitting semiconductor component whose comprising a semiconductor body including a stack of different III-V nitride semiconductor layers configured to emit radiation, wherein the semiconductor body has a first principal surface and a second principal surface, with at least a portion of the radiation produced being emitted through the first principal surface, and wherein a reflector is applied to the second principal surface.
2 . Radiation-emitting semiconductor component pursuant to claim 1 , wherein the semiconductor layers comprise GaN, AlN, InN, AlGaN, InGaN, InAlN, or AlInGaN.
3 . Radiation-emitting semiconductor component pursuant to claim 1 wherein the reflector comprises a reflecting metallic contact surface.
4 . Radiation-emitting semiconductor component pursuant to claim 3 , wherein the contact surface comprises Ag, Al, or an Ag or Al alloy.
5 . Radiation-emitting semiconductor component pursuant to claim 1 , wherein the reflector comprises a plurality of dielectric layers.
6 . Radiation-emitting semiconductor component pursuant to claim 1 , wherein the reflector ( 6 ) has comprises a transparent first layer applied to the second principal surface and a second reflecting layer applied to transparent first layer.
7 . Radiation-emitting semiconductor component pursuant to claim 1 , wherein the entire free surface of the semiconductor body or a subregion thereof is roughened.
8 - 39 . (canceled)