Semiconductor integrated circuit device
View Patent ↗A semiconductor integrated circuit device has a first MOS transistor and a second MOS transistor. The first MOS transistor has a first source, a first gate electrode, and a first wiring metal connected to the first source and overlapping the first gate electrode. The second MOS transistor has a second source, a second gate electrode, and a second wiring metal connected to the second source. The first wiring metal of the first MOS transistor and the second wiring metal are positioned so that they do not overlap the second gate electrode.
1. A semiconductor integrated circuit device comprising:
a first MOS transistor having a first source, a first gate electrode, and a first wiring metal connected to the first source and having a plurality of spaced-apart portions overlapping the first gate electrode of the first MOS transistor; and
a second MOS transistor having a second source, a second gate electrode, and a second wiring metal connected to the second source, the first wiring metal of the first MOS transistor and the second wiring metal being positioned so that they do not overlap the second gate electrode.
2. A semiconductor integrated circuit device according to claim 1 ; wherein the spaced-apart portions of the first wiring metal are spaced-apart in a channel width direction of the first MOS transistor.
3. A semiconductor integrated circuit device according to claim 1 ; wherein the spaced-apart portions of the wiring metal form a combshaped structure.
4. A semiconductor integrated circuit device comprising:
a first MOS transistor having a first source wiring metal, a first drain wiring metal, and a first gate electrode, the first source wiring metal having a plurality of spaced-apart portions overlapping the first gate electrode; and
a second MOS transistor having a second source wiring metal, a second drain wiring metal, and a second gate electrode, the first and second source wiring metals and the first and second drain wiring metals being positioned so that they do not overlap the second gate electrode.
5. A semiconductor circuit device according to claim 4 ; wherein the spaced-apart portions of the first source wiring metal are spaced-apart in a channel width direction of the first MOS transistor.
6. A semiconductor circuit device according to claim 4 ; wherein the spaced-apart portions of the first source wiring metal form a comb-shaped structure.