Method of fabricating isolated semiconductor devices in epi-less substrate
View Patent ↗An structure for electrically isolating a semiconductor device is formed by implanting dopant into a semiconductor substrate that does not include an epitaxial layer. Following the implant the structure is exposed to a very limited thermal budget so that dopant does not diffuse significantly. As a result, the dimensions of the isolation structure are limited and defined, thereby allowing a higher packing density than obtainable using conventional processes which include the growth of an epitaxial layer and diffusion of the dopants. In one group of embodiments, the isolation structure includes a deep layer and a sidewall which together form a cup-shaped structure surrounding an enclosed region in which the isolated semiconductor device may be formed. The sidewalls may be formed by a series of pulsed implants at different energies, thereby creating a stack of overlapping implanted regions.
1. A process of fabricating a semiconductor device comprising:
providing a semiconductor substrate of a first conductivity type, the substrate not containing an epitaxial layer;
forming a mask layer on a surface of the substrate;
patterning the mask layer to form an opening;
implanting a dopant of a second conductivity type into the substrate through the opening at an energy sufficient to form a submerged layer, the submerged layer being completely submerged in the semiconductor substrate;
after forming the submerged layer, forming a trench extending downward from the surface of the substrate into the submerged layer;
introducing a dielectric material into the trench, the trench and the submerged layer forming an isolation structure and enclosing an enclosed region of the first conductivity type above the submerged layer.
2. The process of claim 1 wherein introducing a dielectric material into the trench comprises introducing an oxide into the trench.
3. The process of claim 2 wherein introducing an oxide into the trench comprises depositing an oxide in the trench using chemical vapor deposition.
4. The process of claim 3 further comprising planarizing a top surface of the oxide in the trench.