CMOS pixel with dual gate PMOS
View Patent ↗A pixel circuit with a dual gate PMOS is formed by forming two P + regions in an N − well. The N − well is in a P − type substrate. The two P + regions form the source and drain of a PMOS transistor. The PMOS transistors formed within the N − well will not affect the collection of the photo-generated charge as long as the source and drain potentials of the PMOS transistors are set at a lower potential than the N − well potential so that they remain reverse biased with respect to the N − well. One of the P + regions used to form the source and drain regions can be used to reset the pixel after it has been read in preparation for the next cycle of accumulating photo-generated charge. The N − well forms a second gate for the dual gate PMOS transistor since the potential of the N − well 12 affects the conductivity of the channel of the PMOS transistor. The addition of two NMOS transistors enables the readout signal to be stored at the gate of one of the NMOS transistors thereby making a snapshot imager possible. The circuit can be expanded to form two PMOS transistors sharing a common drain in the N − well.
1. A pixel circuit, comprising:
a P − silicon substrate;
an N − well formed in said P − silicon substrate, wherein said N − well in said P − substrate forms a PN junction which can accumulate signal-generated charge;
a first P + region and a second P + region formed in said N − well;
a PMOS transistor having a source, a drain, a channel, and a gate formed in said N − well, wherein said first P + region forms said source, said second P + region forms said drain, and that part of said N − well between said first P + region and said second P + region forms said channel of said PMOS transistor; and
a gate oxide formed over said channel of said PMOS transistor;
an electrode formed on said gate oxide over said channel of said PMOS transistor, wherein said electrode forms said gate of said PMOS transistor;
a first NMOS transistor having a drain connected to an output node, a gate, and a source connected to said source of said PMOS transistor;
an N + region formed in said N − well; and
a second NMOS transistor having a source connected to said N + region formed in said N − well, a drain connected to said gate of said first NMOS transistor, and a gate connected to said source of said first NMOS transistor.
2. The pixel circuit of claim 1 wherein said signal-generated charge is photo-generated charge.
3. The pixel circuit of claim 1 wherein said first P + region and said second P + region are held at a potential lower than the N − well potential when said junction between said N − well and said P − silicon substrate is accumulating said signal-generated charge.
4. The pixel circuit of claim 1 wherein said junction between said N − well and said P − silicon substrate is reset by bringing said first P + region to the highest potential in the pixel circuit.
5. The pixel circuit of claim 1 wherein said gate of said PMOS transistor is held at ground potential, said drain of said PMOS transistor is held at the highest potential in the pixel circuit, said PMOS transistor is turned off, said first NMOS transistor is turned on, and said second NMOS transistor is turned off when said junction between said N − well and said P − silicon substrate is being reset.
6. The pixel circuit of claim 1 wherein said drain of said PMOS transistor is held at ground potential, said PMOS transistor is turned off, said first NMOS transistor is turned on, and said second NMOS transistor is turned off when said junction between said N − well and said P − silicon substrate is accumulating signal-generated charge.
7. The pixel circuit of claim 1 wherein the potential of said gate of said PMOS transistor is ramped from the highest potential in the pixel circuit to ground potential when said signal-generated charge accumulated at said junction between said N − well and said P − silicon substrate is being read.
8. The pixel circuit of claim 1 wherein after said signal-generated charge accumulated at said junction between said N − well and said P − silicon substrate has been read a potential proportional to said signal-generated charge accumulated at said junction between said N − well and said P − silicon substrate is stored at said gate of said first NMOS transistor.
9. The pixel circuit of claim 1 , further comprising:
a third NMOS transistor having a source connected to said output node; and
a sequential row addressing circuit connected to said gate of said third NMOS transistor.