A BAW resonator includes a resonator region having a piezo-electric layer between two excitation electrodes, wherein an acoustic standing wave forms when operating the BAW resonator at a resonant frequency. Furthermore, the BAW resonator includes a leaky wave reflection structure formed to reflect leaky waves generated when operating the BAW resonator, wherein the leaky waves propagate in a direction differing from a propagation direction of the acoustic standing wave.
1. A BAW resonator comprising:
a resonator region having a piezo-electric layer between two excitation electrodes, wherein a standing wave forms when operating the BAW resonator at a resonant frequency; and
a leaky wave reflection structure operable to reflect leaky waves generated when operating the BAW resonator, wherein the leaky waves propagate in a direction differing from a propagation direction of the acoustic standing waves,
wherein the resonator region further comprises a mirror region formed to reflect an acoustic wave, wherein the mirror region is arranged in the resonator region such that an acoustic standing wave forms between the piezo-electric layer and the mirror region, and
wherein the leaky wave reflection structure is arranged on a side of the piezo-electric layer facing the mirror region.
2. The BAW resonator of claim 1 , wherein the mirror region is formed in an embedding layer and at least a portion of the piezo-electric layer adjacent to the embedding layer.
3. The BAW resonator according to claim 1 , wherein the leaky wave reflection structure is formed to reflect leaky waves propagating substantially perpendicularly to the propagation direction of the standing wave.
4. The BAW resonator according to claim 1 , wherein the leaky wave reflection structure is arranged on a main surface of the piezo-electric layer.
5. A BAW resonator comprising:
a resonator region having a piezo-electric layer between two excitation electrodes, wherein a standing wave forms when operating the BAW resonator at a resonant frequency; and
a leaky wave reflection structure operable to reflect leaky waves generated when operating the BAW resonator, wherein the leaky waves propagate in a direction differing from a propagation direction of the acoustic standing wave,
wherein the resonator region further comprises a mirror region formed to reflect an acoustic wave, wherein the mirror region is arranged in the resonator region such that an acoustic standing wave forms between the piezo-electric layer and the mirror region,
wherein the leaky wave reflection structure is arranged on a main surface of the piezo-electric layer facing the mirror region.
6. A method for operating a BAW resonator comprising a resonator region operable to generate a standing wave and a mirror region operable to reflect the standing wave, the standing wave propagating in a first propagation direction and leaky waves propagating in a second propagation direction different than the first propagation direction, the method comprising:
(a) providing a leaky wave reflection structure around the resonator region on a side of a piezo-electric layer facing the mirror region;
(b) generating the standing wave with the resonator region; and
(c) reducing the transport of energy from the resonator region when the standing wave is generated by reflecting the leaky waves with the leaky wave reflection structure.
7. The BAW resonator according to claim 1 , wherein one of the excitation electrodes and the leaky wave reflection structure comprise a same material.
8. A BAW resonator comprising:
a resonator region having a piezo-electric layer between two excitation electrodes, wherein a standing wave forms when operating the BAW resonator at a resonant frequency; and
a leaky wave reflection structure operable to reflect leaky waves generated when operating the BAW resonator, wherein the leaky waves propagate in a direction differing from a propagation direction of the acoustic standing wave,
wherein the resonator region further comprises a mirror region formed to reflect an acoustic wave, wherein the mirror region is arranged in the resonator region such that an acoustic standing wave forms between the piezo-electric layer and the mirror region,
wherein the mirror region and the leaky wave reflection structure are buried in an embedding layer.
9. The BAW resonator according to claim 8 , wherein the mirror region and the leaky wave reflection structure comprise a same material.
10. The BAW resonator according to claim 1 , wherein the leaky wave reflection structure includes a plurality of reflection structural elements.
11. The BAW resonator according to claim 1 , wherein a width of the leaky wave reflection structure depends on the resonant frequency.
12. The BAW resonator according to claim 1 , wherein the distance of the leaky wave reflection structure from the resonator region depends on the resonant frequency.
13. The BAW resonator according to claim 10 , wherein a distance between the plurality of reflection structural elements depends on the resonant frequency.
14. The BAW resonator according to claim 10 , wherein a number of the plurality of reflection structural elements depends on a predefined reflection factor.
15. The BAW resonator according to claim 1 , wherein the leaky wave reflection structure encircles the resonator region.
16. The BAW resonator according to claim 15 , wherein an opening for contacting one of the excitation electrodes is formed in the leaky wave reflection structure.
17. The BAW resonator according to claim 8 , wherein the leaky wave reflection structure has the shape of at least one rod having a longitudinal axis which is aligned substantially perpendicularly to a plane defined by the piezo-electric layer.
18. The BAW resonator according to claim 8 , wherein the leaky wave reflection structure includes a plurality of reflection structural elements, and wherein a first reflection structural element comprises a first minimum distance to the piezo-electric layer and a second reflection structural element comprises a second minimum distance to the piezo-electric layer, the first minimum distance differing from the second minimum distance.
19. The BAW resonator according to claim 1 , wherein the leaky wave reflection structure comprises a material having an acoustic impedance which is higher or lower than an acoustic impedance of a material abutting on the leaky wave reflection structure.
20. The BAW resonator according to claim 10 , wherein the plurality of reflection structural elements are arranged within a defined region of the BAW resonator.
21. The BAW resonator according to claim 20 , wherein the plurality of reflection structural elements have substantially equal distances to one another.
22. A resonator operable to form a standing wave which propagates in a first propagation direction and leaky waves which propagate in a second propagation direction different than the first propagation direction, the resonator comprising:
(a) a resonator region, wherein the standing wave forms in the resonator region, wherein the resonator region further comprises a mirror region operable to reflect the standing wave; and
(b) a leaky wave reflection structure for reflecting leaky waves propagating in the second propagation direction, the leaky wave reflection structure arranged around the resonator region and on a side of a piezo-electric layer facing the mirror region.
23. The BAW resonator of claim 8 , wherein at least a portion of the piezo-electric layer abuts the embedding layer.