Semiconductor laser
View Patent ↗In a semiconductor laser 1 , a current blocking layer 19 covers a p-type 2 nd cladding layer 17 and a p-type cap layer 18 that extend in a lengthwise direction of an optical resonator, at both a light-emission end and an end opposite the light-emission end, to thus form non-current injection regions in an optical waveguide. By making current blocking layer 19 at the light-emission end large enough that carriers flowing from a current injection region do not reach the light-emission end surface, the light intensity distribution in the near field at the light-emission end surface is strongly concentrated, allowing the horizontal divergence angle of an emerging laser beam to be enlarged. This structure makes it possible to enlarge the horizontal divergence angle independently after having optimized the thickness of cladding layers and the size of the current injection region.
1. A semiconductor laser comprising:
an optical resonator formed by processing either end of an optical waveguide to be a partially reflective surface, the optical waveguide being formed from a 1 st conductive-type cladding layer, an active layer and a 2 nd conductive-type cladding layer layered in the stated order; and
a current blocking layer formed on 1 st and 2 nd regions of the optical resonator, the 1 st region extending a 1 st length from a light-emission end surface of the optical resonator and the 2 nd region extending a 2 nd length from an opposite end surface of the optical resonator, wherein
a section of the active layer extending a predetermined length from the light-emission end surface and a section of the active layer extending a predetermined length from the opposite end surface are formed to have an energy bandgap larger than a remaining section thereof, and
a horizontal divergence angle of light emerging from the light-emission end surface is managed by setting the 1 st length to be longer than a distance over which current flowing into the 1 st region from a 3 rd region of the optical resonator that excludes the 1 st and 2 nd regions is reduced to 1/e by diffusion, where e is a base of a natural logarithm.
2. The semiconductor laser of claim 1 , wherein the 1 st length is at least 4% of the length of the 3 rd region.
3. The semiconductor laser of claim 1 , wherein a section of the active layer extending from the light-emission end surface for a length included in a ±20 μm range of the 1 st length is formed to have the larger energy bandgap.