Electro-optical device
View Patent ↗Accordingly, a preferred embodiment of the present invention comprises an electro-optical device having an optical waveguide that includes two optical pathways, wherein the optical waveguide is embedded within the substrate. A bias electrode layer is formed on the surface of the substrate. A buffer layer is formed on at least a portion of the bias electrode layer and the surface of the substrate. An RF electrode layer is formed on the buffer layer. A bias-tee electrically couples the bias electrode layer and the RF electrode layer.
1. An electro-optical device comprising,
a substrate;
an optical waveguide embedded within said substrate, said optical waveguide further comprising a first optical pathway and a second optical pathway;
a bias electrode layer formed on said substrate;
a buffer layer formed on at least a portion of said bias electrode layer and said substrate;
a RF electrode layer formed on said buffer layer; and
a bias tee electrically couples said bias electrode layer and said RF electrode layer.
2. The electro-optical device of claim 1 , wherein said first optical pathway is substantially parallel to and spaced apart from said second optical pathway.
3. The electro-optical device of claim 2 , wherein said first optical pathway and said second optical pathway are formed of an optical material having an optical field that can be manipulated by an electromagnetic field.
4. The electro-optical device of claim 1 , wherein said bias electrode layer further comprises at least one power bias electrode and at least one ground bias electrode.
5. The electro-optical device of claim 4 , wherein said at least one power bias electrode is positioned between said first optical pathway and said second optical pathway.
6. The electro-optical device of claim 4 , wherein said at least one power bias electrode is electrically coupled to a low-frequency power source.
7. The electro-optical device of claim 1 , wherein said bias electrode layer is comprised of a semi-conductor.
8. The electro-optical device of claim 7 , wherein said semi-conductor conducts electricity at low-frequencies and is a dielectric at high-frequencies.
9. The electro-optical device of claim 7 , wherein said bias electrode layer generates a low-frequency electromagnetic field within at least one of said first optical pathway and said second optical pathway.
10. The electro-optical device of claim 7 , wherein said semi-conductor has a higher index of refraction than said optical waveguide.
11. The electro-optical device of claim 1 , wherein said buffer layer is comprised of a dielectric material.
12. The electro-optical device of claim 4 , wherein said RF electrode layer further comprises at least one power RF electrode and at least one ground RE electrode.
13. The electro-optical device of claim 12 , wherein said at least one power RF electrode is positioned between said first optical pathway and said second optical pathway.
14. The electro-optical device of claim 13 , wherein said at least one power RF electrode is positioned over said at least one power bias electrode.
15. The electro-optical device of claim 12 , wherein said at least one ground RF electrode further comprises said at least one ground bias electrode.
16. The electro-optical device of claim 12 , wherein said at least one power RF electrode is electrically coupled to a high-frequency power source.
17. The electro-optical device of claim 16 , wherein said RF electrode layer generates a high-frequency electromagnetic field within at least one of said first optical pathway and said second optical pathway.
18. The electro-optical device of claim 1 , wherein said RF electrode layer is comprised of a metal.