IP Library Granted Patent US 7,019,418
Granted Patent B2
US 7,019,418 · App. 11/071,348 · Granted Mar 28, 2006

Power control circuit with reduced power consumption

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,019,418
App. No.
11/071,348
Granted
Mar 28, 2006
Kind
B2
Abstract

A first conductive transistor having a high threshold value and a second conductive transistor having a low threshold value are connected in series between a first actual power supply line supplying a power supply voltage and a virtual power supply line connected to a power supply pin of a circuit block constituted of transistors having a low threshold value. The first and second conductive transistors have polarities which are opposite to each other. A power control circuit turns on the first and second conductive transistors while the circuit block is in operation and turning off the first and second conductive transistors while the circuit block is not in operation. Therefore, subthreshold currents of the first and second conductive transistors can be suppressed. As a result of this, it is possible to reduce power consumption of the semiconductor integrated circuit during its standby period.

Claims (23)

1. A semiconductor integrated circuit comprising:

a circuit block constituted of transistors having a low threshold value;

a first actual power supply line supplying a power supply voltage;

a virtual power supply line connected to a power supply pin of said circuit block;

a first conductive transistor having a high threshold value and a second conductive transistor having the opposite polarity to said first conductive transistor and a low threshold value, which are connected in series between said first actual power supply line and said virtual power supply line; and

a power control circuit turning on said first and second conductive transistors while said circuit block is in operation and turning off said first and second conductive transistors while said circuit block is not in operation.

2. The semiconductor integrated circuit according to claim 1 , further comprising

a second actual power supply line supplying a high power supply voltage being higher than the power supply voltage, wherein:

said first conductive transistor is an nMOS transistor;

said second conductive transistor is a pMOS transistor;

said power control circuit applies a first transistor control signal, which is fixed to the high power supply voltage while said circuit block is in operation and is fixed to a ground voltage while said circuit block is not in operation, on a gate of said nMOS transistor; and

said power control circuit applies a second transistor control signal, which is fixed to the ground voltage while said circuit block is in operation and is fixed to the power supply voltage while said circuit block is not in operation, on a gate of said pMOS transistor.

3. The semiconductor integrated circuit according to claim 2 , wherein:

said power control circuit changes the first transistor control signal from the ground voltage to the high power supply voltage, and changes the second transistor control signal from the power supply voltage to the ground voltage, in response to activation of a circuit block control signal which is activated to cause said circuit block to operate; and

said power control circuit changes the first transistor control signal from the high power supply voltage to the ground voltage, and changes the second transistor control signal from the ground voltage to the power supply voltage, in response to deactivation of the circuit block control signal.

4. The semiconductor integrated circuit according to claim 2 , wherein

said power control circuit includes a level converter converting an output voltage corresponding to a high logic level from the power supply voltage to the high power supply voltage.

5. The semiconductor integrated circuit according to claim 2 , further comprising:

a voltage step-down circuit stepping down the high power supply voltage and supplying the stepped-down voltage to said first actual power supply line as the power supply voltage, wherein

the high power supply voltage is supplied to said second actual power supply line via an external power supply pin.

6. The semiconductor integrated circuit according to claim 2 , wherein:

a backgate of said nMOS transistor is connected to the ground line; and

a backgate of said pMOS transistor is connected to said first actual power supply line.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 27, 2015
From: FUJITSU SEMICONDUCTOR LIMITED
To: SOCIONEXT INC.
Reel/Frame 035508/0337 →
CHANGE OF NAME Recorded Jul 22, 2010
From: FUJITSU MICROELECTRONICS LIMITED
To: FUJITSU SEMICONDUCTOR LIMITED
Reel/Frame 024982/0245 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 12, 2008
From: FUJITSU LIMITED
To: FUJITSU MICROELECTRONICS LIMITED
Reel/Frame 021998/0645 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 4, 2005
From: KAKIUCHI, TAKASHI
To: FUJITSU LIMITED
Reel/Frame 016349/0084 →