Multichip semiconductor package

1. A semiconductor apparatus comprising:

a first semiconductor chip having an external connection terminal;

a second semiconductor chip placed below the first semiconductor chip;

a bump electrically connecting a circuit surface of the first semiconductor chip and a circuit surface of the second semiconductor chip; and

a low impedance line formed on top of the second semiconductor chip, electrically connecting the external connection terminal of the first semiconductor chip and an external line of the second semiconductor chip, and having lower impedance than an internal line of the second semiconductor chip,

wherein the first semiconductor chip has the external connection terminal at a peripheral part of the first semiconductor chip, and the external connection terminal is provided closer to a periphery of the first chip than the bump is provided to the periphery of the first chip, and

there is no inclusion of independent circuit elements within the internal line.

2. The semiconductor apparatus of claim 1 , wherein

the external connection terminal of the first semiconductor chip is electrically connected directly to the low impedance line through another bump, and

the external line of the second semiconductor chip is electrically connected directly to the low impedance line.

3. The semiconductor apparatus of claim 1 , wherein

the second semiconductor chip further comprises an external connection terminal and a chip connection terminal,

the low impedance line and the external connection terminal of the first semiconductor chip are electrically connected through the chip connection terminal, and

the low impedance line and the external line of the second semiconductor chip are electrically connected through the external connection terminal of the second semiconductor chip.

4. The semiconductor apparatus of claim 3 , wherein the low impedance line electrically connects the external connection terminal and the chip connection terminal of the second semiconductor chip directly or through the internal line of the second semiconductor chip.

5. The semiconductor apparatus of claim 1 , wherein the low impedance line has a larger film thickness than the internal line of the second semiconductor chip.

6. The semiconductor apparatus of claim 1 , wherein the low impedance line is a line for supplying power to the first semiconductor chip and/or the second semiconductor chip.

7. The semiconductor apparatus of claim 1 , wherein the second semiconductor chip has a larger circuit surface than the first semiconductor chip.

8. The semiconductor apparatus of claim 1 , wherein the first semiconductor chip is a logic chip, and the second semiconductor chip is a memory chip.

9. The semiconductor apparatus of claim 1 , wherein the internal line is a multi-layer thin film disposed at a peripheral part of the second semiconductor chip without the inclusion of independent circuit elements therein.

10. The semiconductor apparatus of claim 9 , wherein the peripheral part of the second semiconductor chip faces the peripheral part of the first semiconductor chip.

11. A semiconductor apparatus manufacturing method, comprising:

forming a first bump on a circuit surface of a first semiconductor chip having an external connection terminal;

forming a second bump on a circuit surface of a second semiconductor chip and forming a low impedance line having lower impedance than an internal line of the second semiconductor chip on the circuit surface of the second semiconductor chip;

electrically connecting the first bump and the second bump and electrically connecting the first bump and the low impedance line with the circuit surfaces of the first and the second semiconductor chips facing each other; and

electrically connecting an external line of the second semiconductor chip and the low impedance line,

wherein the first semiconductor chip has the external connection terminal at a peripheral part of the first semiconductor chip, and the external connection terminal is provided closer to a periphery of the first chip than the bump is provided to the periphery of the first chip, and

there is no inclusion of independent circuit elements within the internal line.

12. The semiconductor apparatus manufacturing method of claim 11 , wherein

when electrically connecting the first bump and the low impedance line, the first bump is electrically connected directly to the low impedance line, and

when electrically connecting the external line of the second semiconductor chip and the low impedance line, the external line of the second semiconductor chip is electrically connected directly to the low impedance line.

13. The semiconductor apparatus manufacturing method of claim 11 , wherein when forming the low impedance line, the low impedance line is formed on top of the circuit surface of the second semiconductor chip.

14. The semiconductor apparatus manufacturing method of claim 11 , wherein the low impedance line is formed by plating.

15. A semiconductor apparatus comprising:

a first semiconductor chip having a first pad; and

a second semiconductor chip having a connection line electrically connecting the first pad and an external line, the second semiconductor chip being electrically connected to the first semiconductor chip through a bump,

wherein the connection line is formed on top of the second semiconductor chip and has lower impedance than an internal line of the second semiconductor chip,

the first semiconductor chip has the first pad at a peripheral part of the first semiconductor chip, and

the first pad is provided closer to a periphery of the first chip than the bump is provided to the periphery of the first chip and

there is no inclusion of independent circuit elements within the internal line.

16. The semiconductor apparatus of claim 15 , wherein the connection line has a larger film thickness than the internal line of the second semiconductor chip.

17. The semiconductor apparatus of claim 15 , wherein the connection line has a larger width than the internal line of the second semiconductor chip.

18. The semiconductor apparatus of claim 15 , wherein an internal circuit of the first semiconductor chip and an internal circuit of the second semiconductor chip are electrically connected by a conductive bump.

19. The semiconductor apparatus of claim 15 , wherein the connection line extends from a peripheral part of the second semiconductor chip to a part of the semiconductor chip facing a peripheral part of the first semiconductor chip, is electrically connected to the external line in the peripheral part of the second semiconductor chip, and is electrically connected to the first pad in the part of the semiconductor chip facing the peripheral part of the first semiconductor chip.

20. The semiconductor apparatus of claim 15 , wherein the connection line is electrically connected to the first pad by a bump and electrically connected to the external line by bonding.

21. The semiconductor apparatus of claim 15 , wherein the second semiconductor chip further comprises:

a second pad electrically connected to the external line by bonding;

a first internal line electrically connecting the second pad and the connection line; and

a second internal line electrically connecting the first pad and the connection line via a bump.

22. The semiconductor apparatus of claim 15 , wherein the connection line is a line for supplying power to the first semiconductor chip and/or the second semiconductor chip.