Layered CU-based electrode for high-dielectric constant oxide thin film-based devices
View Patent ↗A layered device including a substrate; an adhering layer thereon. An electrical conducting layer such as copper is deposited on the adhering layer and then a barrier layer of an amorphous oxide of TiAl followed by a high dielectric layer are deposited to form one or more of an electrical device such as a capacitor or a transistor or MEMS and/or a magnetic device.
1. A layered device, comprising a substrate; an adhering layer of tantalum on said substrate; an electrical conducting layer of copper on said adhering layer; a barrier layer of amorphous TiAl on the underlying layer of copper; and a high dielectric layer on the layer of amorphous TiAl, forming one or more of an electrical device and/or a magnetic device.
2. The device of claim 1 , wherein said substrate is silicon or compound thereof.
3. The device of claim 1 , wherein said substrate is diamond.
4. The device of claim 1 , wherein said substrate is nanocrystalline diamond.
5. The device of claim 1 , wherein said adhering layer has a thickness in the range of from about 10 nanometers (nm) to about 50 nm.
6. The device of claim 1 , wherein said electrical conducting layer is not less than about 100 nm thick.
7. The device of claim 1 wherein said barrier layer is less than about 200 nm in thickness.
8. The device of claim 1 , wherein said high dielectric layer has a thickness in the range of from about 50 nm to about 300 nm.
9. The device of claim 1 wherein said high dielectric layer is a ferroelectric material.
10. The device of claim 9 , wherein said high dielectric layer is one or more of a Ba based ferroelectric material or Pb based ferroelectric material or a Bi based ferroelectric material.
11. The device of claim 10 , wherein said high dielectric material is one or more of BST or PZT or SBT.
12. A layered device, comprising a substrate of or containing silicon and/or a compound thereof or of or containing diamond; an adhering layer of tantalum on said substrate; an electrical conducting layer of copper on said adhering layer; a barrier layer of amorphous TiAl on the underlying layer of copper; and a high dielectric layer on the amorphous TiAl barrier layer, forming one or more of an electrical device and/or a magnetic device.
13. The layered device of claim 12 , wherein said barrier layer is less than about 200 nm in thickness.
14. The layered device of claim 12 , wherein said high dielectric layer has a thickness in the range of from about 50 nm to about 300 nm and is a ferroelectric material.
15. The layered device of claim 14 , wherein said high dielectric layer is one or more of a Ba based ferroelectric material or Pb based ferroelectric material or a Bi based ferroelectric material.
16. The layered device of claim 7 , wherein said high dielectric material is one or more of BST or PZT or SBT.