Retarding agglomeration of Ni monosilicide using Ni alloys
View Patent ↗A method for providing a low resistance non-agglomerated Ni monosilicide contact that is useful in semiconductor devices. Where the inventive method of fabricating a substantially non-agglomerated Ni alloy monosilicide comprises the steps of: forming a metal alloy layer over a portion of a Si-containing substrate, wherein said metal alloy layer comprises of Ni and one or multiple alloying additive(s), where said alloying additive is Ti, V, Ge, Cr, Zr, Nb, Mo, Hf, Ta, W, Re, Rh, Pd or Pt or mixtures thereof; annealing the metal alloy layer at a temperature to convert a portion of said metal alloy layer into a Ni alloy monosilicide layer; and removing remaining metal alloy layer not converted into Ni alloy monosilicide. The alloying additives are selected for phase stability and to retard agglomeration. The alloying additives most efficient in retarding agglomeration are most efficient in producing silicides with low sheet resistance.
1. An electrical contact comprising:
a Si-containing material; and
a substantially non-agglomerated contact located on a portion of said Si-containing material, where said substantially non-agglomerated contact includes Ni monosilicide containing one or more alloying additives, wherein said one or more alloying additives comprise at least one anti-agglomeration additive that comprises V, Cr, Zr, Nb, Mo, Hf, Ta, W, Re or mixtures thereof.
2. The electrical contact of claim 1 wherein said Si-containing material comprises single crystal Si, polycrystalline Si, annealed polycrystalline Si, SiGe, amorphous Si, silicon-on-insulator (SOI) or SiGe-on-insulator (SGOI).
3. The electrical contact of claim 1 wherein said at least one anti-agglomeration additive is Ta, W, Re or mixtures thereof.
4. The electrical contact of claim 1 wherein said at least one anti-agglomeration additive is present in an amount of from about 0.01 at. % to about 50 at. %.
5. The electrical contact of claim 1 wherein said at least one anti-agglomeration additive is present in an amount of from about 0.01 atomic % to about 20 atomic %.
6. The electrical contact of claim 1 wherein said one or more alloying additives is present in an amount of from about 0.01 at. % to about 50 at. %.
7. The electrical contact of claim 1 wherein said one or more alloying additives is present in an amount of from about 0.01 atomic % to about 20 atomic %.
8. The electrical contact of claim 1 wherein said substantially non-agglomerated contact further comprises at least one Ni monosilicide phase stabilizing alloying additive.
9. The electrical contact of claim 8 wherein said at least one Ni monosilicide phase stabilizing alloying additive comprises Ge, Rh, Pd, Pt or mixtures thereof.
10. The electrical contact of claim 8 wherein said one or more alloying additives are present in an amount of from about 0.01 at. % to about 50 at. %.
11. The electrical contact of claim 8 wherein said one or more alloying additives are present in an amount of from about 0.01 atomic % to about 20 atomic %.
12. The electrical contact of claim 8 wherein said substantially non-agglomerated Ni alloy monosilicide contact has a thickness of less than 100 nm.
13. An electrical contact comprising:
a Si-containing material: and
a substantially non-agglomerated contact having a thickness of less than 30 nm located on a portion of said Si-containing material, where said substantially non-agglomerated contact includes Ni monosilicide containing one or more alloying additives, wherein said one or more alloying additives comprise at least one anti-agglomeration additive.
14. An electrical contact comprising:
a Si-containing material; and
a substantially non-agglomerated contact located on a portion of said Si-containing material, where said substantially non-agglomerated contact includes Ni monosilicide containing one or more alloying additives, wherein said one or more alloying additives comprise at least one anti-agglomeration additive and at least one Ni monosilicide phase stabilizing alloying additive, wherein said at least one anti-agglomeration additive comprises V, Cr, Zr, Nb, Mo, Hf, Ta, W, Re or mixtures thereof.
15. The electrical contact of claim 14 wherein said at least one anti-agglomeration additive is Ta, W, Re or mixtures thereof.
16. The electrical contact of claim 14 wherein said at least one Ni monosilicide phase stabilizing alloying additive comprises Ge, Rh, Pd, Pt or mixtures thereof.
17. An electrical contact comprising:
a Si-containing material; and
a substantially non-agglomerated contact located on a portion of said Si-containing material, where said substantially non-agglomerated contact includes Ni monosilicide containing one or more alloying additives, wherein said one or more alloying additives comprise at least one anti-agglomeration additive and at least one Ni monosilicide phase stabilizing alloying additive, said Ni monosilicide phase stabilizing alloying additive comprising Ge, Rh or a mixture thereof.