Method for manufacturing thin film device that includes a chemical etchant process
View Patent ↗The present invention relates to a method for manufacturing a thin film device. The thin film device is manufactured by bonding a second substrate ( 106 ) to a thin film device layer ( 103 ) provided on a protective layer ( 102 ) formed on a first substrate ( 101 ) through a first adhesive layer ( 105 ), then, completely or partly removing the first substrate ( 101 ) in accordance with a process including at least one process of a chemical process and a mechanical polishing process, bonding a third substrate ( 109 ) to the exposed protective layer ( 102 ) or the protective layer ( 102 ) covered with the partly removed first substrate ( 101 ) through a second adhesive layer ( 108 ) and separating or removing the second substrate ( 106 ). Thus, the thin film device suitable for a light and thin display panel is manufactured without deteriorating a ruggedness.
1. A method for manufacturing a thin film device comprising the steps of:
forming a protective layer on a first substrate;
forming a thin film device layer on said protective layer;
forming a first adhesive layer on said thin film device layer;
bonding a second substrate to said thin film device layer with said first adhesive layer;
exposing at least a portion of said protective layer by separating or removing at least a portion of said first substrate using an effective process;
bonding a third substrate to at least a portion of said exposed protective layer with a second adhesive layer; and
separating or removing said second substrate,
wherein
a separate layer is provided between the first substrate and the protective layer and the chemical processing speed of said separate layer is higher than that of the first substrate, and
the chemical process of the separate layer is carried out by allowing chemical agent to reach the separate layer through a through hole of the first substrate formed by a chemical process subsequent to a process for forming at least one of a hole mechanically opened on the first substrate or a hole opened by a chemical process from a resist opening part formed by a photolithography on a resist layer with which the first substrate is covered,
the first substrate is made of glass, the second substrate is made of molybdenum and the third substrate is made of polyimide.
2. The method for manufacturing a thin film device according to claim 1 , wherein said effective process is a mechanical process.
3. The method for manufacturing a thin film device according to claim 2 , wherein the chemical process is a chemical etching process using chemical agents including hydrofluoric acid.
4. The method for manufacturing a thin film device according to claim 2 , wherein the protective layer with which the first substrate side is covered functions as a stopper layer for the chemical process.