Electrostatic discharge device
View Patent ↗An electrostatic discharge (ESD) device, which functions like a diode during normal IC operation and like a SCR during an electrostatic discharge event, is provided. To form an equivalent SCR structure, the ESD device includes a plurality of N+ regions and a plurality of P+ regions formed inside an N-well. The P+ regions and the N+ regions are formed adjacent to each other in a sequence, and the regions located at both ends of the sequence are the N+ regions. In addition, the ESD device is integrated with a pad and is formed under the pad. Furthermore, since the pad has a large surface area and is plated to be a good electrical conductor, the current distribution in the ESD device is uniform.
1. An electrostatic discharge device, comprising:
a P-substrate;
an N-well, formed in said P-substrate;
a first N+ region, formed adjacent to said N-well, said first N+ region being isolated from said N-well;
a first P+ region, formed adjacent to said N-well, said first P+ region being isolated from said N-well and said first N+ region;
a plurality of second P+ regions formed inside said N-well;
a plurality of second N+ regions formed inside said N-well, two of said second N+ regions being located adjacent to boundaries of said N-well;
a first electrode, connecting to at least one of said second N+ regions and at least one of said second P+ region located adjacent to said second N+ region via a first electrical conductor, wherein said first electrical conductor is made of a metal; and
a second electrode, connecting to at least one of said first P+ regions and at least one of said first N+ regions via a second electrical conductor, wherein said second electrical conductor is made of said metal.
2. The electrostatic discharge device as claimed in claim 1 , wherein a width of said N-well can be modulated relatively to said two of said second N+ regions located adjacent to boundaries of said N-well, wherein shortening said width of said N-well reduces a breakdown voltage of a parasitic SCR structure of said electrostatic discharge device, and extending said width of said N-well increases said breakdown voltage of said parasitic SCR structure of said electrostatic discharge device.
3. The electrostatic discharge device as claimed in claim 1 , wherein said second P+ regions and said second N+ regions are formed adjacent to each other and arranged in an interleaved manner.
4. The electrostatic discharge device as claimed in claim 2 , said electrostatic discharge device being formed under a pad.
5. The electrostatic discharge device as claimed in claim 3 , said electrostatic discharge device being formed under a pad.
6. The electrostatic discharge device as claimed in claim 4 , wherein said pad is connected to one of said first and second electrodes, while the other electrode unconnected to said pad is connected to a voltage level via an electrical conductor.
7. The electrostatic discharge device as claimed in claim 5 , wherein said pad is connected to one of said first and second electrodes, while the other electrode unconnected to said pad is supplied with a voltage level via an electrical conductor.
8. An electrostatic discharge device, comprising:
a P-substrate;
an N-buried layer, formed in said P-substrate;
an N-well, formed on said N-buried layer;
a P-well, formed on said N-buried layer adjacent to said N-well;
a third N+ region, formed inside said N-well, said third N+ region being isolated from said P-well and said third N+ region;
a third P+ region, formed inside said N-well, said third P+ region being isolated from said P-well and said third N+ region;
a plurality of fourth N+ regions, formed inside said P-well;
a plurality of fourth P+ regions, formed inside said P-well, two of said fourth P+ regions being located adjacent to both boundaries of said P-well;
a first electrode, connecting to at least one of said fourth N+ regions and at least one of said fourth P+ region via a first electrical conductor; and
a second electrode, connecting to at least one of said third P+ region and at least one of said third N+ region via a second electrical conductor.
9. The electrostatic discharge device as claimed in claim 8 , wherein said fourth P+ regions and said fourth N+ regions are formed adjacent to each other and arranged in an interleaved manner.
10. The electrostatic discharge device as claimed in claim 9 , said electrostatic discharge device being formed under a pad.
11. The electrostatic discharge device as claimed in claim 10 , wherein said pad is connected to one of said first and second electrodes, while the other electrode unconnected to said pad is supplied with a voltage level via an electrical conductor.
12. The electrostatic discharge device as claimed in claim 8 , wherein said P-well is geometrically constituted by a part of said P-substrate, which is not occupied by said N-well and said N-buried layer.
13. The electrostatic discharge device as claimed in claim 8 , wherein said P-well is formed with P-type ions doping.