IP Library › Granted Patent US 7,323,758
Granted Patent B2
US 7,323,758 · App. 11/080,418 · Granted Jan 29, 2008

Solid state imaging device and method for producing the same

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Quick Facts
Patent No.
US 7,323,758
App. No.
11/080,418
Granted
Jan 29, 2008
Kind
B2
Abstract

On a light shielding film 7 , an anti-oxidation layer 9 covering at least the light shielding film 7 is formed. The anti-oxidation layer 9 is formed under a condition which does not oxidize a surface of the light shielding film 7 . The anti-oxidation layer 9 is formed of a high melting point metal compound film having a light shielding property or an insulating film having a light transmissive property. Thus, the scattering ratio of the incident light at the surface of the light shielding film 7 can be uniform among all the pixels, and as a result, a solid state imaging device having suppressed sensitivity non-uniformity can be realized. Since the surface of the light shielding film 7 is not oxidized, the thickness of the light shielding film 7 can be reduced. Thus, the present invention can comply with the demand for size reduction of the pixels.

Claims (13)

1. A solid state imaging device for outputting an electric signal in accordance with an amount of light incident on a light receiving section thereof, the solid state imaging device comprising:

the light receiving section formed in a main surface portion of a semiconductor substrate;

a metal film having formed above the light receiving section an opening through which a light incident on the solid state imaging device is applied to the light receiving section from above the solid state imaging device; and

an anti-oxidation layer partially covering the metal film, wherein;

the metal film has a surface forming a portion of the opening, and said surface is exposed from the anti-oxidation layer,

the anti-oxidation layer is a silicide film, and

the solid state imaging device is one of a CCD sensor and a CMOS sensor.

2. A solid state imaging device according to claim 1 , wherein:

the metal film is a tungsten film; and

the anti-oxidation layer is a tungsten silicide film.

3. A solid state imaging device according to claim 1 , wherein the anti-oxidation layer is the silicide film having a thickness which is substantially 10 nm.

4. A solid state imaging device according to claim 1 , wherein the metal film is a film selected from the group consisting of a high melting point metal film, a high melting point metal compound film, a laminate film formed by laminating the high melting point metal film to the high melting point metal compound film, a high melting point metal film containing a low melting point metal film, a high melting point metal compound film containing a low melting point metal film, and a laminate film formed by laminating a high melting point metal film, a high melting point metal compound film, and a low melting point metal film to each other.

5. A solid state imaging device according to claim 1 , wherein the metal film is a tungsten film, and the tungsten film is a film selected from the group consisting of a tungsten sputtered film formed by sputtering, a tungsten CVD film formed by CVD, and a laminate film formed by laminating the tungsten sputtered film to the tungsten CVD film.