Method for reading ROM cell

1. A method for reading data stored in a multiple bit memory cell, the memory cell comprising a switch located within an array of switches arranged in columns and rows, the array of switches consisting of switches that each have a control node and first and second switched nodes between which the flow of current is dependent on the voltage applied to the control node, wherein each row has a word line connected to the control nodes of the switches of that row, each column comprises only one switch from each row, and each column has first, second and third bit lines connectable to one of the switched nodes of each switch of that column to define the stored data, the other of the switched nodes of each switch being connected to a reference voltage, the method comprising:

fixing the voltage of the second bit line of the switch while simultaneously reading data from the first and third bit lines, and subsequently:

fixing the voltage of the first bit line of the switch while simultaneously reading data from the second and third bit lines.

2. A method according to claim 1 , wherein the steps of fixing the voltage of the first and second bit lines comprise fixing the voltage of the respective line to the reference voltage.

3. A method according to claim 1 wherein the second bit lines are positioned between the first and the third bit lines such that they can provide shielding between the first and third bit lines.

4. A method according to claim 1 wherein the steps recited constitute a single read operation.

5. A method according to claim 1 wherein the switch is a transistor.

6. A method for reading data stored in a multiple bit memory cell, the memory cell comprising a switch located within an array of switches arranged in columns and rows, the array of switches consisting of switches that each have a control node and first and second switched nodes between which the flow of current is dependent on the voltage applied to the control node, wherein each row has a word line connected to the control nodes of the switches of that row, each column comprises only one switch from each row, each column has first, second and third bit lines connectable to one of the switched nodes of each switch of that column to define the stored data and, the bit lines of each column being connectable to one of the switched nodes of each switch of that column, the other of the switched nodes of each switch are connected to a reference voltage, the method comprising:

fixing the voltage of the second bit line of the switch while reading data from the first and third bit lines, and subsequently:

fixing the voltage of the first bit line of the switch while simultaneously reading data from the second and third bit lines;

wherein the steps of fixing the voltage of the first and second bit lines comprise fixing the voltage of the respective line to the reference voltage.

7. A method for reading data stored in a multiple bit memory cell, the memory cell comprising a switch located within an array of switches arranged in columns and rows, the array of switches consisting of switches that each have a control node and first and second switched nodes between which the flow of current is dependent on the voltage applied to the control node, wherein each row has a word line connected to the control nodes of the switches of that row, each column comprises only one switch from each row, and each column has first, second and third bit lines connectable to one of the switched nodes of each switch of that column to define the stored data, the other of the switched nodes of each switch being connected to a reference voltage, the method comprising, in a single read operation:

fixing the voltage of the second bit line of the switch while simultaneously reading data from the first and third bit lines, and subsequently:

fixing the voltage of the first bit line of the switch while simultaneously reading data from the second and third bit lines.