IP Library Granted Patent US 7,625,469
Granted Patent B1
US 7,625,469 · App. 11/081,923 · Granted Dec 1, 2009

Nanoelectrode array for electrochemical analysis

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,625,469
App. No.
11/081,923
Granted
Dec 1, 2009
Kind
B1
Abstract

A nanoelectrode array comprises a plurality of nanoelectrodes wherein the geometric dimensions of the electrode controls the electrochemical response, and the current density is independent of time. By combining a massive array of nanoelectrodes in parallel, the current signal can be amplified while still retaining the beneficial geometric advantages of nanoelectrodes. Such nanoelectrode arrays can be used in a sensor system for rapid, non-contaminating field analysis. For example, an array of suitably functionalized nanoelectrodes can be incorporated into a small, integrated sensor system that can identify many species rapidly and simultaneously under field conditions in high-resistivity water, without the need for chemical addition to increase conductivity.

Claims (25)

1. A nanoelectrode array, comprising:

an electrically conducting substrate,

an insulating layer on the electrically conducting substrate, thereby providing a top surface opposite the electrically conducting substrate,

a plurality of hollow pores formed through the insulating layer to provide a plurality of working nanoelectrodes, wherein each working nanoelectrode has a critical dimension and the plurality of working nanoelectrodes has a uniform inter-electrode spacing between each nanoelectrode and wherein the working nanoelectrodes are recessed from the top surface of the insulating layer, and

a conducting layer deposited on the top surface of the insulating layer to provide a counter electrode.

2. The nanoelectrode array of claim 1 , wherein the critical dimension is less than 1 micron.

3. The nanoelectrode array of claim 2 , wherein the critical dimension is less than 100 nm.

4. The nanoelectrode array of claim 1 , wherein the inter-electrode spacing is greater than 10 times the critical dimension.

5. The nanoelectrode array of claim 1 , wherein the inter-electrode spacing is less than 100 times the critical dimension.

6. The nanoelectrode array of claim 1 , wherein the plurality of working electrodes comprises a disc electrode.

7. The nanoelectrode array of claim 1 , wherein the plurality of working electrodes comprises a band electrode.

8. The nanoelectrode array of claim 1 , wherein the plurality of working electrodes forms an orderly pattern.

9. The nanoelectrode array of claim 1 , wherein the insulating layer comprises a resist polymer.

10. The nanoelectrode array of claim 1 , wherein the working nanoelectrodes are functionalized to provide selectivity for an analyte.

11. The nanoelectrode array of claim 1 , wherein the plurality of working nanoelectrodes are combined in a parallel array.

12. The nanoelectrode array of claim 1 , further comprising at least one additional independently addressable array.

13. A method for fabricating a nanoelectrode array, comprising:

depositing a positive resist layer on an electrically conducting substrate,

forming a latent image of a pore pattern in the resist layer by nanoscale lithography, and

developing the resist to provide a plurality of hollow pores through the resist layer.

14. The method of claim 13 , further comprising depositing a working electrode material in the plurality of hollow pores.

15. The method of claim 14 , wherein the depositing step comprises electroplating.

16. The method of claim 13 , further comprising depositing a counter electrode layer on the top surface of the resist.

17. The method of claim 13 , wherein the resist layer is spun-on the substrate.

18. The method of claim 13 , wherein the forming step comprising direct writing the pore pattern in the resist layer by electron beam lithography.

Assignments (3)
CHANGE OF NAME Recorded Sep 26, 2018
From: SANDIA CORPORATION
To: NATIONAL TECHNOLOGY & ENGINEERING SOLUTIONS OF SANDIA, LLC
Reel/Frame 047639/0437 →
CONFIRMATORY LICENSE Recorded Jun 15, 2005
From: SANDIA CORPORATION
To: ENERGY, U. S. DEPARTMENT OF
Reel/Frame 016335/0566 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 26, 2005
From: YELTON, WILLIAM G.; SIEGAL, MICHAEL P.
To: SANDIA CORPORATION
Reel/Frame 016278/0753 →