Method of fabricating semiconductor device and semiconductor fabricated by the same method

1. A method of fabricating a semiconductor device, comprising:

depositing a silicon layer containing amorphous silicon on a substrate;

partially crystallizing the amorphous silicon layer by applying an annealing process to the silicon layer under an atmosphere of H 2 O at a predetermined temperature, wherein the H 2 O pressure ranges from 10,000 Pa to 2 Mpa, with a non-crystallization percentage of the amorphous silicon layer ranging from 20% to 70% with respect to the total amorphous silicon layer;

forming a polycrystalline silicon layer by applying an laser annealing process to the partially crystallized amorphous silicon layer;

forming a gate insulating layer on the polycrystalline silicon layer; and

forming a gate electrode on the gate insulating layer.

2. The method according to claim 1 , wherein the non-crystallization percentage of the amorphous silicon layer ranges from 30% to 60% with respect to the total amorphous silicon layer.

3. The method according to claim 1 , further comprising implanting impurity ions into source and drain regions after depositing the amorphous silicon layer.

4. The method according to claim 3 , wherein the impurity ions implanted into the source and drain regions are activated while the amorphous silicon layer is partially crystallized.

5. The method according to claim 1 , further comprising:

implanting impurity ions into source and drain regions after forming the gate electrode, and

activating the impurity ions by the annealing process.

6. The method according to claim 1 , wherein the temperature ranges from 550° C. to 750° C.

7. The method according to claim 6 , wherein the temperature ranges from 600° C. to 710° C.

8. The method according to claim 1 , wherein the silicon layer has a thickness of 2,000 Å or less.

9. The method according to claim 8 , wherein the silicon layer has a thickness of 300 Å to 1,000 Å.

10. The method according to claim 1 , wherein the laser annealing process includes an excimer laser annealing (ELA) process.

11. The method according to claim 10 , wherein the ELA process uses a laser beam having an energy density of 200 mJ/cm 2 or more.

12. The method according to claim 11 , wherein the energy density ranges from 200 mJ/cm 2 to 350 mJ/cm 2 .

13. A method of fabricating a semiconductor device, comprising:

depositing a silicon layer containing amorphous silicon on a substrate;

forming a polycrystalline silicon layer by crystallizing the amorphous silicon into polycrystalline silicon through an annealing process performed under an atmosphere of H 2 O at a predetermined temperature, wherein the H 2 O pressure ranges from 10,000 Pa to 2 Mpa, with a non-crystallization percentage of the amorphous silicon layer ranging from 20% to 70% with respect to the total amorphous silicon layer;

recrystallizing the polycrystalline silicon layer by applying a laser annealing process; and

forming an impurity region on the polycrystalline silicon layer.

14. The method according to claim 13 , wherein the temperature ranges from 550° C. to 750° C.

15. The method according to claim 14 , wherein the temperature ranges from 600° C. to 710° C.

16. The method according to claim 13 , wherein the silicon layer has a thickness of 2,000 Å or less.

17. The method according to claim 16 , wherein the silicon layer has a thickness of 300 Å to 1,000 Å.

18. The method according to claim 13 , wherein the laser annealing process includes an excimer laser annealing (ELA) process.

19. The method according to claim 18 , wherein the ELA process uses a laser beam having an energy density of 200 mJ/cm 2 or more.

20. The method according to claim 19 , wherein the energy density ranges from 200 mJ/cm 2 to 350 mJ/cm 2 .