Photoelectric conversion film, photoelectric conversion element, imaging element, method of applying electric field thereto and electric field-applied element
View Patent ↗An imaging element having a photoelectric conversion film which has a laminated structure comprising a p-type semiconductor layer and an n-type semiconductor layer between a pair of electrodes, wherein at least one of the p-type semiconductor and the n-type semiconductor contains an organic compound with controlled orientation; a photoelectric conversion film having at least one organic dye compound, wherein the organic dye compound forms a J aggregate, or the angle between the spectral absorption transition dipolar moment of the organic dye compound and the photoelectric conversion film plane is 40° or less, a photoelectric conversion element and an imaging element; and a method of applying an electric field thereto, and an imaging element which comprises a photoelectric conversion film (a photosensitive layer) having a bulk heterojunction layer as an intermediate layer, or a photoelectric conversion film having two or more repeating structure units of a pn junction layer comprising a p-type semiconductor layer and an n-type semiconductor layer between a pair of electrodes.
1. An imaging element comprising a photoelectric conversion film which comprises a pair of electrodes and a layer containing a p-type semiconductor and an n-type semiconductor between the pair of electrodes, wherein at least one of the p-type semiconductor and the n-type semiconductor contains an organic compound with controlled orientation, and the organic compound is an organic dye compound forming a J aggregate.
2. An imaging element as claimed in claim 1 , wherein an angle between a spectral absorption transition dipolar moment of the organic dye compound and the photoelectric conversion film is 40° or less.
3. The imaging element as claimed in claim 1 , wherein the photoelectric conversion film further comprises a p-type semiconductor layer containing a p-type semiconductor and an n-type semiconductor layer containing a n-type semiconductor between the pair of electrodes, wherein the layer containing a p-type semiconductor and an n-type semiconductor is provided between the p-type semiconductor layer and the n-type semiconductor layer, and at least one of the p-type semiconductor and the n-type semiconductor contains an organic compound with controlled orientation.
4. The imaging element as claimed in claim 1 , wherein both of the p-type semiconductor and the n-type semiconductor contain an organic compound with controlled orientation.
5. The imaging element as claimed in claim 4 , wherein the organic compound with controlled orientation is an organic dye.
6. The imaging element as claimed in claim 5 , wherein the organic dye is a merocyanine dye.
7. The photoelectric conversion film as claimed in claim 1 , wherein the layer containing the organic dye compound has a thickness of from 30 nm to 300 mm.
8. The imaging element as claimed in claim 1 , comprising a photoelectric conversion film which comprises a pair of electrodes, and a p-type semiconductor layer containing a p-type semiconductor and an n-type semiconductor layer containing a n-type semiconductor between the pair of electrodes, at least one of the p-type semiconductor and the n-type semiconductor being an organic semiconductor, wherein the photoelectric conversion film further comprises a layer containing a p-type semiconductor and a n-type semiconductor between the semiconductor layers.
9. The imaging element as claimed in claim 8 , wherein the p-type semiconductor and the n-type semiconductor are both organic semiconductors.
10. The imaging element as claimed in claim 9 , wherein at least one of the p-type organic semiconductor and the n-type organic semiconductor is an organic dye.
11. The imaging element as claimed in claim 8 , wherein the organic dye is a merocyanine dye.
12. The imaging element as claimed in claim 1 , which further comprises a photoelectric conversion film having 2 or more repeating structure units of a pn junction layer comprising a pair of electrodes and a p-type semiconductor layer and an n-type semiconductor layer between the pair of electrodes.
13. The imaging element as claimed in claim 12 , wherein a thin layer containing an electrically conductive material is provided between the repeating structure units.
14. The imaging element as claimed in claim 12 , wherein at least one of the p-type semiconductor and the n-type semiconductor is an organic compound.