Nitride semiconductor light-emitting device
View Patent ↗A nitride semiconductor light-emitting device is provided including: a substrate made of a nitride semiconductor; a semiconductor layer made of a nitride semiconductor containing a p-type impurity, the semiconductor layer being formed as contacting an upper surface of the substrate; a first cladding layer made of a nitride semiconductor containing an impurity of a first conductivity type, the first cladding layer being formed on the semiconductor layer; an active layer formed on the first cladding layer; and a second cladding layer made of a nitride semiconductor containing an impurity of a second conductivity type, the second cladding layer being formed on the active layer.
1. A nitride semiconductor laser device comprising:
a substrate comprising gallium nitride (GaN) adapted to be electrically connected to an n-electrode;
a semiconductor layer comprising a nitride semiconductor containing magnesium (Mg) formed on the substrate;
a first cladding layer comprising an n-type nitride semiconductor, the first cladding layer being formed on the semiconductor layer;
an active layer formed on the first cladding layer; and
a second cladding layer comprising a p-type nitride semiconductor, the second cladding layer being formed on the active layer.
2. The nitride semiconductor laser device according to claim 1 , wherein the substrate is not formed with projections and depressions thereon.
3. The nitride semiconductor laser device according to claim 1 , wherein the semiconductor layer comprises gallium nitride (GaN).
4. The nitride semiconductor laser device according to claim 1 , further comprising a first electrode formed under the substrate and a second electrode formed on the second cladding layer.
5. The nitride semiconductor laser device according to claim 1 , wherein the semiconductor layer is formed as contacting an upper surface of the substrate.
6. The nitride semiconductor laser device according to claim 1 , wherein the semiconductor layer comprises a nitride semiconductor containing silicon (Si).
7. The nitride semiconductor laser device according to claim 1 , wherein the semiconductor layer comprises gallium nitride (GaN) containing silicon (Si) and/or carbon (C).
8. The nitride semiconductor laser device according to claim 1 , wherein the semiconductor layer has a thickness of not less than 5 nm and not more than 200 nm.
9. The nitride semiconductor laser device according to claim 8 , wherein the semiconductor layer is formed as contacting an upper surface of the substrate.
10. The nitride semiconductor laser device according to claim 8 , wherein the semiconductor layer comprises gallium nitride (GaN).
11. The nitride semiconductor laser device according to claim 8 , further comprising a first electrode formed under the substrate and a second electrode formed on the second cladding layer.
12. The nitride semiconductor laser device according to claim 8 , wherein the semiconductor layer comprises a nitride semiconductor containing silicon (Si).
13. The nitride semiconductor laser device according to claim 8 , wherein the semiconductor layer comprises gallium nitride (GaN) containing silicon (Si) and/or carbon (C).
14. The nitride semiconductor laser device according to claim 1 , wherein the substrate is directly on the n-electrode.