Semiconductor device with mechanism for leak defect detection
View Patent ↗A semiconductor device includes a plurality of signal terminals, a first power supply terminal, a second power supply terminal, a core circuit coupled to the plurality of signal terminals and the first power supply terminal, a plurality of first transistors coupled between the respective signal terminals and the second power supply terminal, and a plurality of second transistors coupled between the respective signal terminals and a ground potential, wherein the core circuit is configured to make the first transistors conductive and nonconductive alternately and make the second transistors nonconductive and conductive alternately at a time of test operation, such that one of a first transistor and a second transistor being conductive with respect to a given signal terminal requires another one of the first transistor and the second transistor to be nonconductive with respect to the given signal terminal.
1. A semiconductor device, comprising:
a plurality of signal terminals;
a first power supply terminal;
a second power supply terminal separate from and independent of the first power supply terminal;
a core circuit coupled to said plurality of signal terminals and said first power supply terminal;
a plurality of first transistors coupled between the respective signal terminals and said second power supply terminal; and
a plurality of second transistors coupled between the respective signal terminals and a ground potential,
wherein said core circuit is configured to make said first transistors conductive and nonconductive alternately and make said second transistors nonconductive and conductive alternately at a time of test operation, such that one of a first transistor and a second transistor being conductive with respect to a given signal terminal requires another one of the first transistor and the second transistor to be nonconductive with respect to said given signal terminal.
2. The semiconductor device according to claim 1 , wherein said plurality of signal terminals are operable to output signals from said core circuit to an exterior of said semiconductor device at a time of normal operation, and said core circuit is configured to set signal levels of said signals by controlling conductive/nonconductive states of said first transistors and said second transistors at the time of normal operation.
3. A semiconductor device, comprising:
a plurality of signal terminals;
a first power supply terminal;
a second power supply terminal;
a core circuit coupled to said plurality of signal terminals and said first power supply terminal;
a plurality of first transistors coupled between the respective signal terminals and said second power supply terminal; and
a plurality of second transistors coupled between the respective signal terminals and a ground potential;
a plurality of third transistors coupled between the respective signal terminals and a signal output power supply potential connected to said first power supply terminal,
wherein said core circuit is configured to make said first transistors conductive and nonconductive alternately and make said second transistors nonconductive and conductive alternately at a time of test operation, such that one of a first transistor and a second transistor being conductive with respect to a given signal terminal requires another one of the first transistor and the second transistor to be nonconductive with respect to said given signal terminal, and
wherein said plurality of signal terminals are operable to output signals from said core circuit to an exterior of said semiconductor device at a time of normal operation, and said core circuit is configured to set signal levels of said signals by controlling conductive/nonconductive states of said third transistors and said second transistors at the time of normal operation.
4. The semiconductor device as claimed in claim 1 , wherein said first transistors and said second transistors are fixedly placed in a nonconductive state at times other than the time of test operation, thereby to provide an ESD protection function.
5. The semiconductor device as claimed in claim 1 , further comprising a circuit coupled between one or more control signal outputs of said core circuit and gate nodes of said first transistors and said second transistors to make said first transistors conductive and nonconductive alternately and make said second transistors nonconductive and conductive signal outputs at the time of test operation.
6. The semiconductor device as claimed in claim 1 , wherein said second power supply terminal is connected only to said first transistors.
7. A semiconductor device, comprising:
a first chip;
a second chip;
a package containing said first chip and said second chip, wherein said first chip includes:
a plurality of signal terminals connected to said second chip;
a first power supply terminal connected to an exterior of said package;
a second power supply terminal connected to an exterior of said package separate from and independent of the first power supply terminal;
a core circuit coupled to said plurality of signal terminals and said first power supply terminal;
a plurality of first transistors coupled between the respective signal terminals and said power supply terminal; and
a plurality of second transistors coupled between the respective signal terminals and a ground potential,
wherein said core circuit is configured to make said first transistors conductive and nonconductive alternately and make said second transistors nonconductive and conductive alternately at a time of test operation, such that one of a first transistor and a second transistor being conductive with respect to a given signal terminal requires another one of the first transistor and the second transistor to be nonconductive with respect to said given signal terminal.
8. The semiconductor device as claims in claim 7 , wherein said plurality of signal terminals are operable to output signals from said core circuit to said second chip at a time of normal operation, and said core circuit is configured to set signal levels of said signal by controlling conductive/nonconductive states of said first transistors and said second transistors at the time of normal operation.
9. A semiconductor device, comprising:
a first chip;
a second chip;
a package containing said first chip and said second chip, wherein said first chip includes:
a plurality of signal terminals connected to said second chip;
a first power supply terminal connected to an exterior of said package;
a second power supply terminal connected to an exterior of said package;
a core circuit coupled to said plurality of signal terminals and said first power supply terminal;
a plurality of first transistors coupled between the respective signal terminals and said power supply terminal; and
a plurality of second transistors coupled between the respective signal terminals and a ground potential,
wherein said core circuit is configured to make said first transistors conductive and nonconductive alternately and make said second transistors nonconductive and conductive alternately at a time of test operation, such that one of a first transistor and a second transistor being conductive with respect to a given signal terminal requires another one of the first transistor and the second transistor to be nonconductive with respect to said given signal terminal,
wherein said first chip further includes a plurality of third transistors coupled between the respective signal terminals and a signal output power supply potential, and wherein said plurality of signal terminals are operable to output signals from said core circuit to an exterior of said semiconductor device at a time of normal operation, and said core circuit is configured to set signal levels of said signals by controlling conductive/nonconductive states of said third transistors and said second transistors at the time of normal operation.
10. The semiconductor device as claimed in claim 7 , wherein said signal terminals are not connected to an exterior of said package.