Manufacturing method for semiconductor device, semiconductor device and semiconductor chip

1. A semiconductor device, comprising:

a first semiconductor chip, which has a first front surface and a first rear surface, and is provided with a first semiconductor substrate, a first functional element formed on the first front surface side of the first semiconductor substrate, and a first feedthrough electrode which is placed within a first through hole that penetrates the first semiconductor substrate in a direction of a first thickness thereof and which is electrically connected to the first functional element, wherein the first semiconductor chip further comprises

a rear surface side connection member which is electrically connected to the first feedthrough electrode and which has a joining surface within a recess that is formed in the first rear surface, and

a rear surface protective film on the first rear surface side, covering at least part of the rear surface side connection member, wherein the recess includes an opening in the rear surface protective film,

wherein the rear surface side connection member includes a first portion exposed though the opening formed in the rear surface protective film to provide the joining surface, and a second portion which extends laterally along the first rear surface side of the first semiconductor substrate and is connected to the first feedthrough electrode, and which is covered by the rear surface protective film;

a second semiconductor chip, which has a second front surface and a second rear surface, and is provided with a second semiconductor substrate, a second functional element formed on the second front surface side of the second semiconductor substrate, and a second feedthrough electrode which is placed within a second through hole that penetrates the second semiconductor substrate in a direction of a second thickness thereof and which is electrically connected to the second functional element, wherein the second semiconductor chip further comprises

a front surface side connection member which protrudes from the second front surface and a device connection member which is provided between a bottom of the recess that is formed in the first rear surface of the first semiconductor chip and the second front surface of the second semiconductor chip in a manner that a gap within the recess is formed at least partially between an inner wall surface of the recess and the front surface side connection member and that electrically connects the first feedthrough electrode of the first semiconductor chip to the second feedthrough electrode of the second semiconductor chip through the rear surface side connection member, the bottom of the recess located deeper in the first semiconductor chip than the first rear surface of the first semiconductor chip in said direction of a first thickness of the first semiconductor substrate; and

an external connection member of the semiconductor device, which is electrically connected to the first and second semiconductor chips.

2. A semiconductor device according to claim 1 , wherein the external connection member is a lead frame.

3. A semiconductor chip having a front surface and a rear surface, comprising:

a semiconductor substrate;

a functional element formed on the front surface side of this semiconductor substrate;

a feedthrough electrode which is placed within a through hole that penetrates the semiconductor substrate in a direction of a thickness thereof and which is electrically connected to the functional element;

a front surface side connection member which is electrically connected to the feedthrough electrode and which protrudes from the front surface; and

a rear surface side connection member which is electrically connected to the feedthrough electrode and displaced therefrom in a direction parallel to the rear surface of the semiconductor chip, and which has a joining surface within a recess that is formed in the rear surface; and

a rear surface protective film on the rear surface side, covering at least part of the rear surface side connection member, wherein the recess includes an opening in the rear surface protective film,

wherein the rear surface side connection member includes a first portion exposed though the opening formed in the rear surface protective film to provide the joining surface, and a second portion which extends laterally along the rear surface side of the semiconductor surface and is connected to the feedthrough electrode, and which is covered by the rear surface protective film.

4. A semiconductor chip according to claim 3 , wherein a depth from the rear surface of the joining surface of the rear surface side connection member is smaller than a protrusion height from the front surface of the front surface side connection member.

5. A semiconductor chip according to claim 3 , wherein a region occupied by the rear surface side connection member has a size that can include a region occupied by the front surface side connection member in a plan view where the semiconductor chip is viewed vertically from the top.

6. A semiconductor chip according to claim 3 , wherein the front surface side connection member is made of a material that is deformed more easily than that of the rear surface side connection member.

7. A semiconductor chip according to claim 3 , wherein at least one of the front surface side connection member and the rear surface side connection member includes a spherical connection member.

8. A semiconductor chip according to claim 3 , wherein at least one of the front surface side connection member and the rear surface side connection member includes a solder material.

9. A semiconductor chip according to claim 8 , wherein a solder resist is formed on the rear surface.

10. A semiconductor chip according to claim 3 , wherein the rear surface side is covered with a resin material layer.

11. A semiconductor device, comprising:

first and second semiconductor chips, each of which has a front surface and a rear surface, and is provided with

a semiconductor substrate,

a functional element formed on the front surface side of the semiconductor substrate, and

a feedthrough electrode which is placed within a through hole that penetrates the semiconductor substrate in a direction of a thickness thereof and which is electrically connected to the functional element,

wherein a width of the through hole is substantially constant throughout the respective semiconductor chip in the direction of thickness thereof;

a connection member which is provided between a bottom of a recess that is formed in the rear surface of the first semiconductor chip and the front surface of the second semiconductor chip in a manner that a gap within the recess is formed at least partially between an inner wall surface of the recess and the connection member and which electrically connects the feedthrough electrode of the first semiconductor chip to the feedthrough electrode of the second semiconductor chip, the bottom of the recess located deeper in the first semiconductor chip than the rear surface of the first semiconductor chip in said direction of a thickness of the semiconductor substrate thereof,

wherein the connection member includes an extended portion which extends along the rear surface side of the semiconductor substrate of the first semiconductor chip and is connected to the feedthrough electrode,

a protective film on the rear surface side of the first semiconductor chip, covering the extended portion, wherein the recess includes an opening in the rear surface protective film,

wherein the extended portion of the connection member extends laterally to the feedthrough electrode of the first semiconductor chip, which is covered by the protective film; and

an external connection member of the semiconductor device, which is electrically connected to the first and second semiconductor chips.