Photoconductive layer included in radiation imaging panel
A photoconductive layer included in a radiation imaging panel for recording radiation image information as an electrostatic latent image is a polycrystal made of Bi 12 MO 20 , where M is at least one of Ge, Si and Ti, the filling factor of Bi 12 MO 20 composing the photoconductive layer is 70% or more, and the thickness of the photoconductive layer is between 50 μm and 600 μm inclusive.
1 . A photoconductive layer included in a radiation imaging panel for recording radiation image information as an electrostatic latent image, wherein the photoconductive layer is a polycrystal made of Bi 12 MO 20 , where M is at least one of Ge, Si and Ti, the filling factor of Bi 12 MO 20 composing the photoconductive layer is 70% or more, and the thickness of the photoconductive layer is between 50 μm and 600 μm inclusive.
2 . The photoconductive layer according to claim 1 , wherein the filling factor is 80% or more.
3 . The photoconductive layer according to claim 2 , wherein the filling factor is between 90 and 99.5%.
4 . The photoconductive layer according to claim 1 , wherein the photoconductive layer is a sintered film.
5 . The photoconductive layer according to claim 2 , wherein the photoconductive layer is a sintered film.
6 . The photoconductive layer according to claim 3 , wherein the photoconductive layer is a sintered film.