Integrated circuit device with temperature monitor members
View Patent ↗In a semiconductor integrated circuit device, a logic circuit section is provided at the top surface of a P-type silicon substrate and a multi-level wiring layer. The device is further provided with a temperature sensor section in which a first temperature monitor member of vanadium oxide is provided above the multi-level wiring layer. A second temperature monitor member of Ti is provided at a lowermost layer of the multi-level wiring layer. The first and second temperature monitor members are connected in series between a ground potential wire and a power-source potential wire, with an output terminal connected to the node of both members. The temperature coefficient of the electric resistivity of the first temperature monitor member is negative, while that of the second temperature monitor member is positive.
1. An integrated circuit device comprising:
a semiconductor substrate;
a multi-layer wiring layer provided on said semiconductor substrate;
a first temperature monitor member having a first end portion and a second end portion being provided on a layer overlying said multi-layer wiring layer, an electric resistivity of said first temperature monitor member having a negative temperature coefficient;
a second temperature monitor member having a first end portion and a second end portion, said first end portion of said second temperature monitor being connected to said second end portion of said first temperature monitor member, an electric resistivity of said second temperature monitor member having a positive temperature coefficient;
a first terminal connected to said first end portion of said first temperature monitor member, said first terminal being applied a first reference potential;
a second terminal connected to said second end portion of said second temperature monitor member, said second terminal being applied a second reference potential different from said first reference potential; and
a third terminal connected to said second end portion of said first temperature monitor member and said first end portion of said second temperature monitor member, said third terminal outputting a voltage indicating a temperature of said integrated circuit device,
wherein said first temperature monitor member, said second temperature monitor member, said first terminal, said second terminal and said third terminal comprise a temperature monitor circuit.
2. The integrated circuit device according to claim 1 , wherein a temperature dependence of said electric resistivity of said first temperature monitor member is non-linear, and a temperature dependence of said electric resistivity of said second temperature monitor member is linear.
3. The integrated circuit device according to claim 1 , wherein said first temperature monitor member is formed of vanadium oxide.
4. The integrated circuit device according to claim 1 , wherein said second temperature monitor member is formed of a metal or an alloy.
5. The integrated circuit device according to claim 4 , wherein said second temperature monitor member is formed of one metal selected from a group consisting of Al, Ti, Ni, W, Ta and Be, or an alloy of said metal, or an alloy essentially consisting of two or more metals in said group.
6. The integrated circuit device according to claim 1 , wherein said second temperature monitor member is formed of TiN.
7. The integrated circuit device according to claim 1 , wherein said second temperature monitor member is formed of barium strontium titanate or barium titanate.
8. The integrated circuit device according to claim 7 , wherein said second temperature monitor member is laid out below a lowermost wiring layer of said multi-layer wiring layer.
9. The integrated circuit device according to claim 1 , further comprising a logic circuit section formed at said semiconductor substrate and said multi-layer wiring layer.
10. The integrated circuit device according to claim 1 , wherein said second temperature monitor is formed in a layer of said multi-layer wiring layer.