Plasma processing apparatus

1. A plasma processing apparatus, comprising:

a chamber for containing a substrate to be processed;

a gas supply unit for supplying a processing gas into the chamber; and

a microwave introducing unit for introducing plasma generating microwaves into the chamber, the microwave introducing unit including:

a microwave oscillator for outputting a plurality of microwaves having specified outputs; and

an antenna section having a plurality of antennas to which the microwaves outputted from the microwave oscillator are respectively transmitted,

wherein the microwave oscillator has:

a microwave generator for generating a low power microwave;

a divider for dividing the microwave generated from the microwave generator into a plurality of microwaves; and

a plurality of amplifier sections for amplifying respective microwaves divided by the divider to specified powers, and

wherein a plurality of microwaves outputted from the plurality of amplifier sections are respectively transmitted to the plurality of antennas, and

wherein each of the plurality of amplifier sections has:

a variable attenuator for attenuating a microwave outputted from the divider to a predetermined level;

a solid state amplifier for amplifying a microwave outputted from the variable attenuator to a specified power; and

a matcher for regulating a power of a reflected microwave returning to the solid state amplifier from the antenna.

2. The plasma processing apparatus of claim 1 , wherein each of the plurality of amplifier sections further has an isolator for separating the reflected microwave returning to the solid state amplifier from a microwave which is outputted from the solid state amplifier to the antenna.

3. The plasma processing apparatus of claim 2 , wherein the isolator has:

a dummy load for converting the reflected microwave into heat; and

a circulator for leading a microwave outputted from the solid state amplifier to the antenna and leading a reflected microwave from the antenna to the dummy load.

4. The plasma processing apparatus of claim 2 , wherein the solid state amplifier has:

a sub-divider for dividing an input microwave into a multiplicity of microwaves;

a multiplicity of semiconductor amplifying devices for respectively amplifying the multiplicity of microwaves outputted from the sub-divider to respectively specified powers; and

a combiner for combining microwaves whose powers are amplified by the multiplicity of semiconductor amplifying devices.

5. The plasma processing apparatus of claim 1 , wherein the solid state amplifier has:

a sub-divider for dividing an input microwave into a multiplicity of microwaves;

a multiplicity of semiconductor amplifying devices for respectively amplifying the multiplicity of microwaves outputted from the sub-divider to respectively specified powers; and

a combiner for combining microwaves whose powers are amplified by the multiplicity of semiconductor amplifying devices.

6. The plasma processing apparatus of claim 5 , wherein the semiconductor amplifying devices are formed of power MOSFETs, GaAsFETs, or GeSi transistors.

7. The plasma processing apparatus of claim 1 , wherein each of the plurality of antennas has a wave delay plate and a slot plate.

8. The plasma processing apparatus of claim 1 , wherein the antenna section has:

a circular antenna provided at a center thereof;

plural approximately fan-shaped antennas which surrounds a periphery of the circular antenna; and

a dividing plate for dividing the circular antenna and the plural approximately fan-shaped antennas from each other.

9. The plasma processing apparatus of claim 8 , wherein the dividing plate is a metal member and grounded.

10. The plasma processing apparatus of claim 9 , wherein in case of letting a wavelength of the microwave be λ 1 ; and a relative dielectric constant of the wave delay plate, ∈ r ; and defining λg=λ 1 /∈ r 1/2 ,

the circular antenna is provided with first slots of a predetermined length disposed along a circle located inwardly by λg/4 from the periphery of the circular antenna and second slots of a specified length disposed on one or more concentric circles located inwardly at intervals of λg/2 from the first slots and

each of the plural approximately fan-shaped antennas is provided with third slots of a preset length located inwardly by λg/4 from respective boundaries between the approximately fan-shaped antennas and fourth slots of a specific length located inwardly at intervals of λg/2 from the third slots.

11. The plasma processing apparatus of claim 8 , wherein in case of letting a wavelength of the microwave be λ 1 ; and a relative dielectric constant of the wave delay plate, ∈ r ; and defining λg=λ 1 /∈ r 1/2 ,

the circular antenna is provided with first slots of a predetermined length disposed along a circle located inwardly by λg/4 from the periphery of the circular antenna and second slots of a specified length disposed on one or more concentric circles located inwardly at intervals of λg/2 from the first slots and

each of the plural approximately fan-shaped antennas is provided with third slots of a preset length located inwardly by λg/4 from respective boundaries between the approximately fan-shaped antennas and fourth slots of a specific length located inwardly at intervals of λg/2 from the third slots.

12. The plasma processing apparatus of claim 1 , further comprising a magnetic field generating unit for generating a magnetic field in the chamber, and

wherein a magnetron effect is produced by an electric field generated by the microwaves introduced into the chamber and the magnetic field generated by the magnetic field generating unit.