Solid state imaging device
View Patent ↗A zener diode is formed in a spacer, which adhered on the semiconductor substrate so as to surround an image sensor, by semiconductor process. A first contact terminal is connected to a CCD output terminal of the image sensor, and a second contact terminal is connected to a ZD ground terminal on the semiconductor substrate. When the ZD ground terminal is connected to ground, the zener diode is actuated. Capacitance components of the zener diode smoothes a waveform of the CCD output so as to prevent an unnecessary radiation noise from generating.
1. A solid state imaging device, comprising:
a substrate on which an image sensor having plural pixels is formed;
a frame-like spacer adhered on said substrate so as to surround said image sensor;
a cover glass adhered above said spacer so as to seal inside of said spacer; and
a semiconductor device embedded in said spacer, connected to an output of said image sensor, and disposed between said substrate and said cover glass,
wherein said semiconductor device is disposed directly under said cover glass.
2. A solid state imaging device as described in claim 1 , further comprising a first terminal formed on an undersurface of said semiconductor device, and said first terminal electrically contacting a second terminal which is connected to said image sensor.
3. A solid state imaging device as described in claim 2 , wherein said spacer comprises silicon, and said semiconductor device is formed by a semiconductor process.
4. A solid state imaging device as described in claim 3 , wherein said semiconductor device comprises a zener diode.
5. A solid state imaging device as described in claim 4 , further comprising a third terminal formed on said undersurface of said semiconductor device, said third terminal electrically contacting a ground terminal formed on said semiconductor substrate, and said ground terminal being connected to a print wiring extending outside said spacer.
6. A solid state imaging device as described in claim 5 , wherein said first terminal has a rough surface.
7. A solid state imaging device as described in claim 6 , wherein said third terminal has a rough surface.
8. A solid state imaging device as described in claim 1 , wherein the substrate comprises a semiconductor substrate, further comprising a ground terminal disposed outside of the spacer on a surface of the semiconductor substrate, the ground terminal being electrically connected to the semiconductor device.
9. A solid state imaging device as described in claim 1 , wherein the semiconductor device is disposed adjacent to the image sensor.
10. A solid state imaging device as described in claim 1 , wherein the semiconductor device comprises a zener diode.
11. A solid state imaging device comprising:
a semiconductor substrate on which an image sensor having plural pixels is formed;
a frame-like spacer adhered on said semiconductor substrate so as to surround said image sensor;
a cover glass adhered above said spacer so as to seal inside of said spacer; and
means, formed in said spacer, connected to said image sensor, and disposed between said substrate and said cover glass, for reducing noise,
wherein said means for reducing noise is disposed directly under said cover glass.
12. A solid state imaging device as described in claim 11 , wherein the means for reducing noise reduces radiation noise generated in the solid state imaging device.
13. A solid state imaging device as described in claim 11 , wherein the means for reducing noise smoothes a waveform image sensor output of the solid state imaging device.