Methods of fabricating interferometric modulators by selectively removing a material
View Patent ↗Methods for making MEMS devices such as interferometric modulators involve selectively removing a sacrificial portion of a material to form an internal cavity, leaving behind a remaining portion of the material to form a post structure. The material may be blanket deposited and selectively altered to define sacrificial portions that are selectively removable relative to the remaining portions. Alternatively, a material layer can be laterally recessed away from openings in a covering layer. These methods may be used to make unreleased and released interferometric modulators.
1. A method for making an interferometric modulator, comprising:
depositing a material over a first electrode layer;
depositing a second layer over the material, the second layer comprising a plurality of openings formed therethrough, the openings being configured to expose the material and to facilitate operation of the resulting interferometric modulator;
flowing an etchant through the openings; and
etching the material to remove a sacrificial portion of the material to thereby form a plurality of cavities each having a cavity edge and at least one support structure, the support structure comprising a remaining portion of the material, the etching being non-selective between the sacrificial portion and the remaining portion of the material, wherein at least one cavity edge merges with one or more other cavity edges to form the support structure.
2. The method of claim 1 in which the material is selected from the group consisting of molybdenum and silicon.
3. The method of claim 1 in which the etching of the material is selective against the second layer.
4. The method of claim 1 in which the etching comprises laterally recessing the material away from the openings.
5. The method of claim 1 in which the etching is isotropic etching.
6. The method of claim 1 in which the etchant comprises XeF 2 .
7. The method of claim 1 further comprising etching the second layer to form the plurality of openings.
8. The method of claim 1 in which the first electrode layer comprises a first mirror.
9. The method of claim 8 in which the second layer comprises a second electrode.
10. The method of claim 9 in which the second layer further comprises a second mirror.
11. The method of claim 1 in which the second layer comprises a mechanical layer.
12. The method of claim 11 further comprising depositing a mirror layer, at least a portion of which is suspended from the mechanical layer after etching to remove the sacrificial portion of the material.
13. The method of claim 12 in which the etching to remove the sacrificial portion is selective against the mirror layer.
14. The method of claim 12 in which the support structure has a re-entrant profile.
15. A method for making an interferometric modulator, the interferometric modulator comprising at least a first mirror, a second mirror separated from the first mirror by a plurality of cavities each having a cavity edge, and at least one support structure positioned at a side of the cavities and configured to support the second mirror spaced from the first mirror, the method comprising:
providing a substrate, the substrate having a first area configured to underlie the first mirror and a second area configured to underlie the support structure;
depositing a first mirror layer over at least the first area;
depositing a material over the first area and over the second area;
depositing a second mirror layer over at least the material over the first area; and
forming a plurality of openings configured to facilitate flow of an etchant to the material over the first area and to facilitate operation of the resulting interferometric modulator;
the material over the first area being removable by the etchant to thereby form the plurality of cavities and the support structure, where the support structure comprises the material over the second area, the material having substantially uniform properties, wherein at least one cavity edge merges with one or more other cavity edges to form the support structure.
16. The method of claim 15 in which the material is selected from the group consisting of molybdenum and silicon.
17. The method of claim 16 further comprising removing at least a part of the material over the first area to thereby form the plurality of cavities.
18. The method of claim 17 wherein removing at least a part of the material over the first area to thereby form the plurality of cavities comprises a timed etch.
19. The method of claim 17 wherein removing at least a part of the material over the first area to thereby form the plurality of cavities comprises laterally recessing the material away from the plurality of openings.
20. The method of claim 18 in which the etchant comprises XeF 2 .
21. The method of claim 15 in which the plurality of openings is formed through the second mirror layer.
22. The method of claim 15 further comprising forming a mechanical layer over at least the material over the first area.
23. The method of claim 15 in which the plurality of openings comprises a via.
24. The method of claim 15 in which the plurality of openings comprises a plurality of intersecting channels.
25. The method of claim 1 in which the etching comprises a timed etch.
26. The method of claim 1 in which the support structure comprises a post.