Distributed Bragg reflector systems and methods

1. A distributed Bragg reflector, comprising:

a first layer formed to be a first thickness; and

a second layer formed to be a second thickness,

wherein the first and second thicknesses are determined using a wavelength that is adjacent to a center wavelength of an optical band of the distributed Bragg reflector, so as to improve uniformity of reflectance of the distributed Bragg reflector throughout an optical band thereof.

2. The distributed Bragg reflector of claim 1 , comprising a third layer formed to be a third thickness and a fourth layer formed to be a fourth thickness, the third and fourth thicknesses determined using a wavelength that is adjacent to the center wavelength of the optical band of the distributed Bragg reflector.

3. The distributed Bragg reflector of claim 2 , comprising a fifth layer formed to be a fifth thickness and a sixth layer formed to be a sixth thickness, the fifth and sixth thicknesses determined using a wavelength that is adjacent to the center wavelength of the optical band of the distributed Bragg reflector.

4. The distributed Bragg reflector of claim 3 , comprising the first, third and fifth layers formed of Si, the second, fourth and sixth layers formed of SiO 2 , and the optical band of the distributed Bragg reflector being 400 nm-700 nm.

5. The distributed Bragg reflector of claim 4 , comprising the thicknesses of the first, third and fifth layers formed of Si determined using a refractive index of the Si, and the thicknesses of the second, fourth and sixth layers formed of SiO 2 determined using a refractive index of SiO 2 .

6. The distributed Bragg reflector of claim 2 , comprising the first and second thicknesses of the first and second layers formed using a different adjacent wavelength than the third and fourth thicknesses of the third and fourth layers.

7. The distributed Bragg reflector of claim 3 , comprising the fifth and sixth thicknesses of the fifth and sixth layers formed using a different adjacent wavelength than the first through fourth thicknesses of the first through fourth layers.

8. The distributed Bragg reflector of claim 7 , comprising the adjacent wavelength used to form the first and second thicknesses being approximately 500 nm, the different adjacent wavelength used to form the third and fourth thicknesses being approximately 510 nm, and the different wavelength used to form the fifth and sixth thicknesses being approximately 520 nm.

9. The distributed Bragg reflector of claim 1 , comprising the adjacent wavelength being between 500 nm and 520 nm.

10. A Xerographic device, comprising the distributed Bragg reflector of claim 1 .

11. A method of forming a distributed Bragg reflector, comprising:

forming a first layer to be a first thickness; and

forming a second layer to be a second thickness,

wherein the first and second thicknesses are determined using a wavelength that is adjacent to a center wavelength of an optical band of the distributed Bragg reflector, so as to improve uniformity of reflectance of the distributed Bragg reflector throughout an optical band thereof.

12. The method of claim 11 , comprising forming a third layer to be a third thickness and forming a fourth layer to be a fourth thickness, the third and fourth thicknesses determined using a wavelength that is adjacent to the center wavelength of the optical band of the distributed Bragg reflector.

13. The method of claim 12 , comprising forming a fifth layer to be a fifth thickness and a sixth layer to be a sixth thickness, the fifth and sixth thicknesses determined using a wavelength that is adjacent to the center wavelength of the optical band of the distributed Bragg reflector.

14. The method of claim 13 , comprising forming the first, third and fifth layers of Si and forming the second, fourth and sixth layers of SiO 2 , and the optical band of the distributed Bragg reflector being 400 nm-700 nm.

15. The method of claim 14 , comprising the thicknesses of the first, third and fifth layers formed of Si determined using a refractive index of the Si, and the thicknesses of the second, fourth and sixth layers formed of SiO 2 determined using a refractive index of SiO 2 .

16. The method of claim 15 , comprising forming the fifth and sixth thicknesses of the fifth and sixth layers using a different adjacent wavelength than the formation of the first through fourth thicknesses of the first through fourth layers.

17. The method of claim 16 , comprising the adjacent wavelength used to form the first and second thicknesses being approximately 500 nm, the different adjacent wavelength used to form the third and fourth thicknesses being approximately 510 nm, and the different wavelength used to form the fifth and sixth thicknesses being approximately 520 nm.

18. The method of claim 12 , comprising forming the first and second thicknesses of the first and second layers using a different adjacent wavelength than the formation of the third and fourth thicknesses of the third and fourth layers.

19. The method of claim 16 , comprising determining the thicknesses l i of the first and second layers using l i =λ a /4n i , the thicknesses l i of the third and fourth layers using l i =λ 1 /4n i , and the thicknesses l i of the fifth and sixth layers using l i =λ 2 /4n i ,

wherein λ a is the adjacent wavelength to the center wavelength of the optical band to the DBR, λ 1 is a wavelength with a lowest reflectance over the optical band, λ 2 is a wavelength with a next lowest reflectance over the optical band after the of the third and fourth layers are determined, and n i is the refractive index.

20. The method of claim 11 , comprising forming the first layer of polysilicon and forming the second layer of silicon nitride Si 3 N 4 , the adjacent wavelength being between 500 nm and 520 nm.