Vertical cavity surface emitting laser optimized for thermal sensitivity
View Patent ↗A vertical cavity surface emitting laser (VCSEL) optimized for use in self mixing applications. The VCSEL generally includes a bottom distributed Bragg reflector (DBR) mirror formed on a substrate. An active region is formed on the bottom mirror. A top DBR mirror is formed on the active region. A trench is formed in the at least the top mirror. An aperture is oxidized into the VCSEL. At least one of the bottom DBR mirror, the top DBR mirror, the metal contacts, the trench, and/or the aperture is optimized to make the VCSEL more thermally sensitive to changes in current through the VCSEL.
1. A VCSEL for use in self mixing applications, the VCSEL comprising:
a bottom DBR mirror formed on a substrate;
an active region formed on the bottom mirror;
a top DBR mirror formed on the active region;
metal contacts coupled to the active region;
a trench formed in at least the top mirror, the trench extending through at least a portion of the bottom DBR mirror so as to make the VCSEL more thermally sensitive to changes in current through the VCSEL;
an aperture oxidized into the VCSEL; and
a dielectric layer formed on the top DBR mirror, the thickness of the dielectric layer being a multiple of an odd quarter wavelength of the beam.
2. The VCSEL of claim 1 wherein at least one of the top and bottom mirrors is optimized to make the VCSEL more thermally sensitive to changes in current through the VCSEL by having an increased number of mirror periods in at least one of the top and bottom mirrors to increase the electrical impedance of the VCSEL.
3. The VCSEL of claim 1 wherein at least one of the top mirror and bottom mirror is optimized to make the VCSEL more thermally sensitive to changes in current through the VCSEL by having a decreased doping to increase the electrical impedance of the VCSEL.
4. The VCSEL of claim 1 wherein the trench is optimized to extend below the active region to reduce the thermal conductivity of the VCSEL.
5. The VCSEL of claim 1 wherein the diameter of the trench is reduced to reduce the thermal mass of the VCSEL.
6. The VCSEL of claim 5 , wherein the diameter of the trench is about 25 microns.
7. The VCSEL of claim 1 , wherein at least one of the metal contacts is of a reduced size so as to decrease a thermal mass of the VCSEL.
8. The VCSEL of claim 1 , wherein the bottom mirror comprises alternating high and low index of refraction layers wherein the low index of refraction layers comprise non-binary semiconductor materials directly below the active region and binary semiconductor materials a predetermined distance below the active region to reduce thermal conductivity.
9. The VCSEL of claim 1 , wherein the aperture is oxidized to a size so as to increase the electrical impedance of the VCSEL.
10. The VCSEL of claim 1 , wherein the top mirror comprises alternating layers of high and low index of refraction and wherein the top mirror is optimized to make the VCSEL more thermally sensitive to changes in current through the VCSEL by reducing doping in alternating layers of the top mirror to increase the electrical impedance of the VCSEL.
11. A sensor for use in Doppler velocimetry applications, the sensor comprising a VCSEL as set forth in claim 1 .
12. An optical mouse comprising a sensor as set forth in claim 11 .
13. A telephone handset comprising a sensor as set forth in claim 11 .
14. A paper positioning device comprising a sensor as set forth in claim 11 .
15. A linear measurement device comprising a sensor as set forth in claim 11 .
16. The linear measurement device of claim 15 , wherein the linear measurement device is configured to measure a length of fish tape.
17. An appliance comprising a sensor as set forth in claim 11 .
18. The VCSEL of claim 1 , wherein the trench extends to the substrate.
19. A VCSEL for use in self mixing applications, the VCSEL comprising:
a bottom DBR mirror formed on a substrate;
an active region formed on the bottom mirror;
a top DBR mirror formed on the active region;
metal contacts coupled to the active region;
a trench formed in at least the top mirror, the trench extending through at least a portion of the bottom DBR mirror so as to make the VCSEL more thermally sensitive to changes in current through the VCSEL; and
an aperture oxidized into the VCSEL;
wherein the bottom DBR mirror comprises an upper portion and a lower portion, the upper portion being disposed closer to the active region than the lower portion, the upper portion and the lower portion comprising alternating high and low index of refraction layers, the low index of refraction layers in the upper portion comprising non-binary semiconductor materials and the low index of refraction layers in the lower portion comprising binary semiconductor materials.
20. The VCSEL of claim 19 , further comprising a dielectric layer formed on the top DBR mirror, the thickness of the dielectric layer being a multiple of an odd quarter wavelength of the beam.
21. The VCSEL of claim 19 , wherein at least a portion of the high index of refraction layers and low index of refraction layers in the bottom DBR mirror comprise AlGaAs having an Al content of between 0% and 100% and wherein the low index of refraction layers have a higher fraction of Al than the high index of refraction layers.
22. The VCSEL of claim 19 , wherein the top DBR mirror comprises alternating high and low index of refraction layers, and wherein the alternating layers of the top DBR mirror and the upper portion of the bottom DBR mirror comprise about 10% AlGaAs and about 85% AlGaAs, and the alternating layers of the lower portion of the bottom DBR mirror comprise about 10% AlGaAs and about 100% AlAs.
23. A VCSEL for use in self mixing applications, the VCSEL comprising:
a bottom DBR mirror formed on a substrate;
an active region formed on the bottom DBR mirror;
a top DBR mirror formed on the active region;
metal contacts coupled to the active region, the metal contacts each having a thickness, an inner diameter, and an outer diameter;
a trench formed in at least the top DBR mirror;
an aperture oxidized into the VCSEL,
wherein
the thickness of at least one of the metal contacts is less than about 1 micron; or
the inner diameter of at least one of the metal contacts is at least 2 microns larger than the aperture; or
the outer diameter of at least one of the metal contacts is at least about 15 microns larger than the inner diameter of the same metal contact.
24. A sensor for use in Doppler velocimetry applications, the sensor comprising a VCSEL as set forth in claim 23 .
25. An appliance comprising a sensor as set forth in claim 24 .
26. The appliance of claim 25 , wherein the appliance comprises one of an optical mouse, a telephone handset, a paper positioning device, and a linear measurement device.
27. A VCSEL for use in self mixing applications, the VCSEL comprising:
a bottom DBR mirror formed on a substrate;
an active region formed on the bottom DBR mirror;
a top DBR mirror formed on the active region;
metal contacts coupled to the active region;
a trench formed in at least the top DBR mirror, the diameter of the trench being about 25 microns to decrease a thermal mass of the VCSEL;
an aperture oxidized into the VCSEL.
28. A sensor for use in Doppler velocimetry applications, the sensor comprising a VCSEL as set forth in claim 27 .
29. An appliance comprising a sensor as set forth in claim 28 .
30. The appliance of claim 29 , wherein the appliance comprises one of an optical mouse, a telephone handset, a paper positioning device, and a linear measurement device.