Semiconductor device comprising through-electrode interconnect
View Patent ↗A semiconductor device having a through electrode excellent in performance as for an electrode and manufacturing stability is provided. There is provided a through electrode composed of a conductive small diameter plug and a conductive large diameter plug on a semiconductor device. A cross sectional area of the small diameter plug is made larger than a cross sectional area and a diameter of a connection plug, and is made smaller than a cross sectional area and a diameter of the large diameter plug. In addition, a protruding portion formed in such a way that the small diameter plug is projected from the silicon substrate is put into an upper face of the large diameter plug. Further, an upper face of the small diameter plug is connected to a first interconnect.
1. A semiconductor device comprising:
a semiconductor substrate;
an insulating layer provided on a main surface of said semiconductor substrate, said insulating layer having a conductive component therein; and
a through electrode penetrating said semiconductor substrate and connected to said conductive component;
wherein said through electrode including:
a first conductive plug connected to said conductive component; and
a second conductive plug provided in said semiconductor substrate and connected to said first conductive plug, said second conductive plug has a cross sectional area larger than a cross sectional area of said first conductive plug, and a protruding portion of said first conductive plug is embedded in said second conductive plug,
and said second conductive plug is directly connected to said first conductive plug, and said second conductive plug is connected to said conductive component through said first conductive plug.
2. The semiconductor device according to claim 1 , further comprising:
an impurity region provided in said main surface of said semiconductor substrate to form a transistor, wherein said conductive component being wiring which forms an interconnect layer with said insulating layer.
3. The semiconductor device according to claim 1 ,
wherein a part of said first conductive plug being wrapped in said second conductive plug.
4. The semiconductor device according to claim 1 ,
wherein a plurality of said first conductive plugs being electrically connected to a plurality of said second conductive plugs.
5. The semiconductor device according to claim 1 ,
wherein an upper surface of said second conductive plug being exposed in said main surface of said semiconductor substrate, and a bottom surface of said second conductive plug being exposed in a rear surface of said semiconductor substrate.
6. The semiconductor device according to claim 1 ,
wherein said second conductive plug comes into contact with said semiconductor substrate via an insulating film.
7. The semiconductor device according to claim 1 , further comprising:
a cylindrical insulating body formed in said semiconductor substrate, wherein said second conductive plug being located inside of said cylindrical insulating body.
8. The semiconductor device according to claim 1 ,
wherein a diameter of said first conductive plug is from 1 to 5 μm.
9. The semiconductor device according to claim 1 ,
wherein said first conductive plug extends into said semiconductor substrate to a depth of 20 to 50 μm.
10. The semiconductor device according to claim 1 ,
wherein said protruding portion extends into said second conductive plug to a depth of 1 to 50 μm.
11. The semiconductor device according to claim 1 ,
wherein a diameter of said second conductive plug is from 10 to 1000 μm.
12. The semiconductor device according to claim 1 ,
wherein a side face of said first conductive plug is coated with a SiN film except for said protruding portion.
13. A semiconductor device comprising:
a semiconductor substrate;
an insulating layer provided on a main surface of said semiconductor substrate, said insulating layer having a conductive component therein; and
a through electrode penetrating said semiconductor substrate and connected to said conductive component;
wherein said through electrode including:
a first conductive plug connected to said conductive component; and
a second conductive plug provided in said semiconductor substrate and connected to said first conductive plug, said second conductive plug has a cross sectional area larger than a cross sectional area of said first conductive plug, and
wherein an upper surface of said second conductive plug being located below said main surface of said semiconductor substrate, and a bottom surface of said second conductive plug being exposed in a rear surface of said semiconductor substrate, said second conductive plug is directly connected to said first conductive plug, and said second conductive plug is connected to said conductive component through said first conductive plug.
14. The semiconductor device according to claim 13 , further comprising:
an impurity region provided in said main surface of said semiconductor substrate to form a transistor, wherein said conductive component comprising wiring which forms an interconnect layer with said insulating layer.
15. The semiconductor device according to claim 13 ,
wherein a part of said first conductive plug is wrapped in said second conductive plug.
16. The semiconductor device according to claim 13 ,
wherein a plurality of said first conductive plugs are electrically connected to a plurality of said second conductive plugs.
17. A semiconductor device comprising:
a semiconductor substrate;
an insulating layer provided on a main surface of said semiconductor substrate, said insulating layer having a conductive component therein; and
a through electrode penetrating said semiconductor substrate and connected to said conductive component;
wherein said through electrode including:
a first conductive plug connected to said conductive component; and
a second conductive plug provided in said semiconductor substrate and connected to said first conductive plug, said second conductive plug has a cross sectional area larger than a cross sectional area of said first conductive plug, and
wherein said second conductive plug is projected from a rear surface of said semiconductor substrate, said second conductive plug is directly connected to said first conductive plug, and said second conductive plug is connected to said conductive component through said first conductive plug.
18. The semiconductor device according to claim 17 , further comprising:
an impurity region provided in said main surface of said semiconductor substrate to form a transistor, wherein said conductive component being wiring which forms an interconnect layer with said insulating layer.
19. The semiconductor device according to claim 17 ,
wherein a part of said first conductive plug is wrapped in said second conductive plug.
20. The semiconductor device according to claim 17 ,
wherein a plurality of said first conductive plugs are electrically connected to a plurality of said second conductive plugs.
21. The semiconductor device according to claim 1 ,
wherein a bottom surface of said first conductive plug is located below an upper surface of said second conductive plug.