Amorphous silicon deposition for sequential lateral solidification
View Patent ↗An amorphous silicon deposition method includes the step of forming a buffer layer on a transparent substrate; depositing amorphous silicon on the buffer layer by a thickness ranging from about 600 to about 2,000 angstroms; repeatedly irradiating the amorphous silicon layer to completely melt using a laser beam that has a complete melting energy density; and moving the laser beam by a transaction distance for the next laser beam irradiation.
1. A crystallization method, comprising:
forming a buffer layer on a transparent substrate;
depositing an approximately 1000 angstrom thick amorphous silicon layer on the buffer layer;
forming a polycrystalline silicon layer using a sequential lateral solidification process to form a laterally grown grain by repeatedly irradiating the amorphous silicon layer using a laser beam that completely melts a region of the amorphous silicon layer; and
moving the laser beam a translation distance between irradiations so that subsequent irradiations of the amorphous silicon layer overlap a previously irradiated region,
wherein the laser beam has an energy density between about 1.2 J/cm 2 and about 2 J/cm 2 .
2. .The method according to claim 1 , further comprising annealing the silicon layer melted between irradiations.
3. The method according to claim 1 , wherein the maximum translation distance ranges from about 2.25 to about 4.75 micrometers.
4. The method according to claim 1 , wherein the minimum translation distance ranges from about 0.25 to about 1.8 micrometers.