Semiconductor memory with single cell and twin cell refreshing
View Patent ↗Flags are formed to respectively correspond to memory cell groups each including volatile memory cells. Each flag indicates as a set state that the memory cells store data in a second memory mode. In a changing operation of changing from a first memory mode in which data is independently retained by each memory cell to a second memory mode in which same data are retained in the memory cells of each memory cell group, each flag is reset in response to the first access to the corresponding memory cell group. Therefore, only the first access is made in the second memory mode in each memory cell group. The memory cells are accessed in a mode according to the flag in the changing operation, thereby allowing a system managing the semiconductor memory to freely access the memory cells even during the changing operation. Consequently, a practical changing time can be eliminated.
1. A semiconductor memory comprising:
a plurality of volatile memory cells;
a plurality of word lines connected to said memory cells, respectively;
a plurality of memory cell groups each constituted of said memory cells connected to a predetermined number of said word lines, respectively;
a control circuit executing operations of a first memory mode and a second memory mode, the first memory mode being a mode in which each of the memory cells independently retains data and the second memory mode being a mode in which each of the memory cells in each of said memory cell groups retain same data;
a plurality of flags corresponding to said memory cell groups, respectively, and indicating as a set state that said memory cells store data in the second memory mode; and
a flag reset circuit that, in a changing operation of changing states of all of said memory cells from the second memory mode to the first memory mode, resets each of said flags in response to a first access to a corresponding memory cell group among said memory cell groups.
2. The semiconductor memory according to claim 1 , further comprising
a flag set circuit setting all said flags prior to the changing operation.
3. The semiconductor memory according to claim 1 , further comprising
a flag detection circuit that, when the memory cell is accessed, detects whether or not the corresponding flag is set, wherein
said control circuit executes the operation of one of the first memory mode and the second memory mode according to a result of the detection by said flag detection circuit.
4. The semiconductor memory according to claim 1 , wherein
when the first access is a write operation, said control circuit reads data from all of said memory cells of the memory cell group to write back the read data to all of said memory cells, and writes data to one of said memory cells designated as a write target.
5. The semiconductor memory according to claim 4 , further comprising:
bit lines connected to said memory cells; and
a sense amplifier connected to said bit lines, wherein
said control circuit keeps said sense amplifier activated while data is read from, written back to, and written to said memory cells.
6. The semiconductor memory according to claim 5 , further comprising
a word control circuit that makes the word line unselected while said sense amplifier is activated, said word line being connected to the memory cell in the memory cell group except the memory cell designated as the write target.
7. The semiconductor memory according to claim 1 , wherein
when the first access is a read operation, said control circuit reads data from all of said memory cells of the memory cell group to output the read data to an external part of the semiconductor memory and writes back the read data to said memory cells.
8. The semiconductor memory according to claim 1 , wherein
when the first access is a refresh operation, said control circuit reads data from all of said memory cells of the memory cell group to write back the read data to said memory cells.
9. The semiconductor memory according to claim 1 , further comprising:
a normal operation mode in which the semiconductor memory operates according to an externally supplied access command and an internally generated refresh command; and
a data retention mode in which the semiconductor memory operates according only to the refresh command, wherein
data is stored in the first memory mode during the normal operation mode, and is stored in the second memory mode during the data retention mode, and
in a changing operation from the data retention mode to the normal operation mode, the memory cell in the first memory mode and the memory cell in the second memory mode concurrently exist.
10. The semiconductor memory according to claim 9 , wherein:
said memory cells of the memory cell group include a partial memory cell storing data that is retained during the second memory mode; and
after shifting from the normal operation mode to the data retention mode, said control circuit executes, every time the refresh command is generated, a common refresh operation of reading data stored in the partial memory cell to write the read data to all of said memory cells of the memory cell group until the states of all of said memory cell groups shift to the second memory mode.
11. The semiconductor memory according to claim 1 , wherein:
the single memory cell connected to the single word line retains one-bit data in the first memory mode; and
all of said memory cells of the memory cell group retain the data in the second memory mode.