Thick film dielectric structure for thick dielectric electroluminescent displays

1. A smoothing layer for use with a thick film dielectric layer, the smoothing layer comprising a high dielectric constant material with an areal density of pit defects of about less than 100 defects per square millimeter, made by the addition of a surfactant to a metal organic solution or a sol gel of organo metallic precursor compounds that is subsequently sintered on said thick film dielectric layer, wherein said surfactant is selected from the group consisting of a non-ionic surfactant selected from the group consisting of dimethyl hexynol, ethoxylated acetylenic diols, p-tertiary octylphenoxy polyethyl alcohol and mixtures thereof and an anionic surfactant selected from the group consisting of alkyl ether phosphate, cetyltrimethylammonium bromide and mixtures thereof.

2. The smoothing layer of claim 1 , wherein said high dielectric constant material is a piezoelectric or ferroelectric material.

3. The smoothing layer of claim 2 , wherein said piezoelectric or ferroelectric material is lead zirconate titanate (PZT).

4. The smoothing layer of claim 2 , wherein said piezoelectric or ferroelectric material smoothing layer comprises one or more of lead lanthanum zirconate titanate, barium titanate, barium strontium titanate, barium tantalate and tantalum oxide.

5. The smoothing layer of claim 1 , wherein said surfactant is added to a metal organic solution.

6. The smoothing layer of claim 1 , wherein said surfactant is provided as about 0.1% to about 5% by weight of said metal organic solution.

7. The smoothing layer of claim 6 , wherein said surfactant is provided as about 1.0% to about 2% by weight of said metal organic solution.

8. The smoothing layer of claim 1 , wherein said non-ionic surfactant is 2,4,7,9-tetramethyl-5-decyne-4,7-diol.

9. The smoothing layer of claim 1 , wherein said smoothing layer is sintered at temperatures of up to about 850° C.

10. The smoothing layer of claim 1 , wherein said smoothing layer is provided as two or more layers having a total thickness of up to about 1500 nm on said thick film dielectric layer.

11. A sintered composite thick film dielectric structure for an electroluminescent display, said structure comprising;

a thick film dielectric layer; and

a smoothing layer thereon, said smoothing layer comprising a high dielectric constant material with an areal density of pit defects of about less than 100 defects per square millimeter, made by the addition of a surfactant to a metal organic solution or a sol gel of organo metallic precursor compounds that is subsequently sintered on said thick film dielectric layer, wherein said surfactant is selected from the group consisting of a non-ionic surfactant selected from the group consisting of dimethyl hexynol, ethoxylated acetylenic diols, p-tertiary octylphenoxy polyethyl alcohol and mixtures thereof and an anionic surfactant selected from the group consisting of alkyl ether phosphate, cetyltrimethylammonium bromide and mixtures thereof.

12. The composite thick film dielectric structure of claim 11 , wherein said high dielectric constant material is a piezoelectric or ferroelectric material.

13. The composite thick film dielectric structure of claim 12 , wherein said piezoelectric or ferroelectric material is lead zirconate titanate (PZT).

14. The composite thick film dielectric structure of claim 12 , wherein said smoothing layer is selected from the group consisting of lead lanthanum zirconate titanate, barium titanate, barium strontium titanate, barium tantalate and tantalum oxide.

15. The composite thick film dielectric structure of claim 11 , wherein said surfactant is provided as about 0.1% to about 5% by weight of said metal organic solution.

16. The composite thick film dielectric structure of claim 15 , wherein said surfactant is provided as about 1.0% to about 2% by weight of said metal organic solution.

17. The composite thick film dielectric structure of claim 11 , wherein said non-ionic surfactant is 2,4,7,9-tetramethyl-5-decyne-4,7-diol.

18. The composite thick film dielectric structure of claim 11 , wherein said smoothing layer is provided as two or more layers having a total thickness of up to about 1500 nm.

19. The composite thick film dielectric structure of claim 18 , wherein said smoothing layer that is not directly adjacent said thick film dielectric layer, is made from a metal organic solution or a sol gel of organo metallic precursor compounds to which no surfactant is added.

20. The composite thick film dielectric structure of claim 11 , wherein said thick film dielectric layer is formed from a composition sintered from a paste comprising:

(a) one or more of lead magnesium niobate (PMN), lead magnesium niobate-titanate (PMN-PT), lead titanate, barium titanate and lead oxide;

(b) glass frit composition comprising lead oxide, boron oxide and silicon oxide;

(c) solvent; and

(d) polymer binder.

21. The composite thick film dielectric structure of claim 20 , wherein said sintering temperature is up to about 850° C.

22. An electroluminescent display, said display comprising;

a substrate;

a composite thick film dielectric structure as claimed in claim 11 provided on said substrate; and

a phosphor composition provided on said composite thick film dielectric structure.

23. The display of claim 22 , wherein said composite thick film dielectric structure comprises a smoothing layer having an areal density of pit defects of about less than 100 defects per square millimeter.

24. A sintered composite thick film dielectric structure for an electroluminescent display, said structure comprising:

(a) a lower layer of a thick film dielectric composition comprising one or more of lead magnesium niobate (PMN), lead magnesium niobate-titanate (PMN-PT), lead titanate, barium titanate and lead oxide; a glass frit composition comprising lead oxide, boron oxide and silicon dioxide; and

(b) an upper smoothing layer comprising at least one layer of lead zirconate titanate (PZT), wherein said at least one layer directly adjacent to (a) has an areal density of pit defects of about less than 100 defects per square millimeter and is made by the addition of a surfactant to a metal organic solution or a sol gel of organo metallic precursor compounds that is subsequently sintered on said thick film dielectric layer, wherein said surfactant is selected from the group consisting of a non-ionic surfactant selected from the group consisting of dimethyl hexynol, ethoxylated acetylenic diols, p-tertiary octylphenoxy polyethyl alcohol and mixtures thereof and an anionic surfactant selected from the group consisting of alkyl ether phosphate, cetyltrimethylammonium bromide and mixtures thereof.

25. The structure of claim 24 , wherein said non-ionic surfactant is 2,4,7,9-tetramethyl-5-decyne-4,7-diol.