Semiconductor device and method of manufacturing same
View Patent ↗A semiconductor device having a first semiconductor element placed over a second semiconductor element, so that an edge of the first semiconductor element is not placed over a predetermined circuit in the second semiconductor element, and wherein a size of the first semiconductor element is smaller than a size of the second semiconductor element. The predetermined circuit has a characteristic that tends to change with stress greater than characteristics of other circuits on the second semiconductor element that are under the edge of the first semiconductor element.
1. A semiconductor device comprising:
a first semiconductor element having a first surface of a quadrangle shape and a second surface of a quadrangle shape; and
a second semiconductor element having a first surface of a quadrangle shape and a second surface of a quadrangle shape, the first semiconductor element placed above the first surface of the second semiconductor element so that the second surface of the first semiconductor element faces the first surface of the second semiconductor element,
wherein a size of the first and second surfaces of the first semiconductor element are smaller than a size of each of the first and second surfaces of the second semiconductor element, and wherein a size of the first semiconductor element is smaller than a circuit element area of the second semiconductor element, and
wherein the first semiconductor element is placed against one side of the second semiconductor element, so that an edge of the second surface of the first semiconductor element is not placed above a predetermined circuit block in the circuit element area of the second semiconductor element.
2. The semiconductor device according to claim 1 , wherein characteristics of the predetermined circuit block change with stress at a rate greater than characteristics of other circuits under the edge of the second surface of the first semiconductor element.
3. The semiconductor device according to claim 2 , wherein the predetermined circuit block is a memory cell array.
4. The semiconductor device according to claim 2 , wherein the first semiconductor element includes first circuits that implement a desired function and second circuits, and the second semiconductor element includes third circuits including the predetermined circuit that also implement the desired function.
5. The semiconductor device according to claim 2 , wherein the first semiconductor element has a plurality of first electrodes in the first surface of the first semiconductor element, and the second semiconductor element has a plurality of second electrodes in the first surface of the second semiconductor element for being electrically connected to external connecting terminals.
6. The semiconductor device according to claim 5 , wherein the predetermined circuit block is a memory cell array.
7. The semiconductor device according to claim 5 , wherein the first semiconductor element includes first circuits that implement a desired function and second circuits, and the second semiconductor element includes third circuits including the predetermined circuit that also implement the desired function.
8. The semiconductor device according to claim 5 , wherein the plurality of second electrodes are electrically connected to the external connecting terminals by wires.
9. The semiconductor device according to claim 5 , further comprising a plurality of third electrodes in the first surface of the second semiconductor element for being electrically connected to the first electrodes.
10. The semiconductor device according to claim 9 , wherein the predetermined circuit block is a memory cell array.
11. The semiconductor device according to claim 10 , wherein the first semiconductor element includes first circuits that implement a desired function and second circuits, and the second semiconductor element includes third circuits including the predetermined circuit that also implement the desired function.
12. The semiconductor device according to claim 9 , wherein the first semiconductor element includes first circuits that implement a desired function and second circuits, and the second semiconductor element includes third circuits including the predetermined circuit that also implement the desired function.
13. The semiconductor device according to claim 9 , wherein the plurality of third electrodes are electrically connected to the first electrodes by wires.
14. The semiconductor device according to claim 1 , wherein the first semiconductor element includes first circuits that implement a desired function and second circuits, and the second semiconductor element includes third circuits including the predetermined circuit that also implement the desired function.
15. A semiconductor device comprising:
a first semiconductor element having a first surface of a quadrangle shape and a second surface of a quadrangle shape; and
a second semiconductor element having a first surface of a quadrangle shape and a second surface of a quadrangle shape, a plurality of respective different circuit areas including a memory cell area are disposed on the first surface of the second semiconductor element,
the first semiconductor element placed above the first surface of the second semiconductor element so that the second surface of the first semiconductor element faces the first surface of the second semiconductor element,
wherein a size of the first and second surfaces of the first semiconductor element are smaller than a size of each of the first and second surfaces of the second semiconductor element, and wherein a size of the first semiconductor element is smaller than a circuit element area of the second semiconductor element, and
wherein an edge of the second surface of the first semiconductor element is over at least one of the circuit areas of the second semiconductor element other than the memory cell area.
16. The semiconductor device according to claim 15 , wherein the first semiconductor element has a plurality of first electrodes in the first surface of the first semiconductor element, and the second semiconductor element has a plurality of second electrodes in the first surface of the second semiconductor element electrically connected to external connecting terminals.
17. The semiconductor device according to claim 16 , further comprising a plurality of third electrodes in the first surface of the second semiconductor element electrically connected to the first electrodes.
18. The semiconductor device according to claim 16 , wherein the plurality of second electrodes are electrically connected to the external connecting terminals by wires.
19. The semiconductor device according to claim 15 , wherein the first semiconductor element includes first circuits that implement a desired function and second circuits, and the second semiconductor element includes third circuits including the memory cells in the memory cell area that also implement the desired function.
20. The semiconductor device according to claim 15 , wherein the circuit areas also include peripheral circuit areas in addition to the memory cell area.