IP Library Granted Patent US 7,326,639
Granted Patent B2
US 7,326,639 · App. 11/102,903 · Granted Feb 5, 2008

Method for manufacturing a semiconductor substrate and method for manufacturing an electro-optical device with electroless plating

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Quick Facts
Patent No.
US 7,326,639
App. No.
11/102,903
Granted
Feb 5, 2008
Kind
B2
Abstract

A method is provided including, after joining a wiring substrate and an element substrate, separating a second substrate of the element substrate from a semiconductor element, and electrically coupling an element-side terminal that has been exposed by the separation to a wiring-side terminal disposed outside the semiconductor element by electroless plating.

Claims (25)

1. A method for manufacturing a semiconductor substrate including a semiconductor element mounted on a wiring substrate, comprising:

forming the wiring substrate including a wiring-side terminal on a surface of a first substrate;

forming an element substrate by providing the semiconductor element including an element-side terminal to a second substrate so as to dispose the element-side terminal face to face with a surface of the second substrate;

joining the wiring substrate with the element substrate by disposing the surface of the first substrate on which the wiring-side terminal is provided face to face with the surface of the second substrate on which the semiconductor element is provided in a way that the wiring-side terminal is disposed outside the semiconductor element in a substrate plane;

separating the second substrate from the semiconductor element after joining the wiring substrate with the element substrate; and

electrically coupling the element-side terminal that has been exposed by separating the second substrate to the wiring-side terminal disposed outside the semiconductor element by electroless plating.

2. The method for manufacturing a semiconductor substrate according to claim 1 , wherein forming the wiring substrate includes forming a group of terminals composed of a plurality of wiring-side terminals, and

joining the wiring substrate with the element substrate includes applying an adhesive to an in-plane area serving as a joining area that is inside the group of terminals so as to join the wiring substrate with the element substrate by means of the adhesive.

3. The method for manufacturing a semiconductor substrate according to claim 1 , wherein electrically coupling the terminals to each other is conducted by making plating grow from both the wiring-side terminal and the element-side terminal.

4. The method for manufacturing a semiconductor substrate according to claim 1 , further comprising:

before electrically coupling the terminals to each other, providing an insulating wall outside the wiring-side terminal disposed around the semiconductor element so as to restrain plating from extending outward.

5. A method for manufacturing an electro-optical device including a switching element for driving a light-emitting element mounted on a wiring substrate, comprising:

the method for manufacturing a semiconductor substrate according to claim 1 so as to mount the semiconductor element as the switching element on the wiring substrate.

6. A method of making an electrical device comprising:

a.) forming a wiring substrate having a plurality of terminals surrounding an area and facing an upper surface of the substrate;

b.) temporarily securing an electrical component to a surface of a carrier substrate, said component having a first face and a second face with terminals thereon, the second face being adjacent the surface of the carrier substrate;

c.) positioning the carrier substrate relative to the wiring substrate so that the first face of the component contacts said area of the wiring substrate;

d.) transferring the component from the carrier substrate to the wiring substrate, the terminals on the component and the terminals on the wiring substrate mutually facing in the same direction and being spaced from each other; and

e.) forming a metallization layer from the terminals on the component to the terminals on the wiring layer to electrically connect them together; and

wherein step e.) is performed by electroless plating.

7. The method of claim 6 wherein step b.) is performed by securing the component with an adhesive and wherein step d.) is performed by subjecting the adhesive to a treatment that sufficiently reduces its adhesive strength to permit the carrier substrate to be lifted away from the component.

8. The method of claim 7 wherein the treatment comprises irradiating the adhesive with laser light.

9. The method of claim 8 wherein the component is a thin film transistor (TFT) and wherein the method further comprises:

mounting an electroluminescent (EL) substrate to the wiring substrate; and

electrically connecting the TFT on the wiring substrate to the EL substrate through a conductive path including the terminals on the component, the metallization layer and the terminals on the wiring layer.

Assignments (3)
MERGER Recorded Aug 7, 2012
From: SAMSUNG LED CO., LTD.
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 028744/0272 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 12, 2012
From: SEIKO EPSON CORPORATION
To: SAMSUNG LED CO., LTD.
Reel/Frame 027524/0837 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 8, 2005
From: AKAGAWA, SUGURU; YODA, TSUYOSHI
To: SEIKO EPSON CORPORATION
Reel/Frame 016466/0795 →