IP Library Granted Patent US 7,297,650
Granted Patent B2
US 7,297,650 · App. 11/105,124 · Granted Nov 20, 2007

Method for producing low-loss tunable ceramic composites with improved breakdown strengths

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Quick Facts
Patent No.
US 7,297,650
App. No.
11/105,124
Granted
Nov 20, 2007
Kind
B2
Abstract

The production of low-loss, tunable composite ceramic materials with improved breakdown strengths is disclosed. The composite materials comprise ferroelectric perovskites such as barium strontium titanate or other ferroelectric perovskites combined with other phases such as low-loss silicate materials and/or other low-loss oxides. The composite materials are produced in sheet or tape form by methods such as tape casting. The composite tapes exhibit favorable tunability, low loss and tailorable dielectric properties, and can be used in various microwave devices.

Claims (17)

1. A tape cast, low-loss, tunable ceramic composite layer having improved breakdown strength, the material comprising a sintered mixture of at least one tunable ceramic material and at least one additional ceramic material, wherein the at least one additional ceramic material comprises from about 3 to about 65 weight percent of the tape cast layer and comprises a silicate of at least one metal selected from Be, Mg, Ca, Sr, Ba, Ra, Li, Na, K, Rb, Cs, Al, Zr, Zn, Fr, B, Fe, Mn, Cu, Ce, Cr, La, Y, Ti, Ta, Nb, Mo, W, Ni, Pd, Pb and Bi.

2. The layer of claim 1 , wherein the layer has a thickness of from about 0.005 to about 2 mm.

3. The layer of claim 1 , wherein the layer has a thickness of from about 5 to about 50 microns.

4. The layer of claim 1 , wherein the layer has a thickness of greater than about 50 microns.

5. The layer of claim 1 , wherein the layer has an average grain size of less than about 10 microns.

6. The layer of claim 1 , wherein the layer has an average grain size of from about 2 to about 5 microns.

7. The layer of claim 1 , wherein the layer has a breakdown strength of greater than about 8 V/micron.

8. The layer of claim 1 , wherein the layer has a breakdown strength of greater than about 12 V/micron.

9. The layer of claim 1 , wherein the at least one electronically tunable ceramic material comprises from about 20 to about 99 weight percent of the tape cast layer and comprises barium strontium titanate, barium titanate, strontium titanate, barium calcium titanate, barium calcium zirconium titanate, lead titanate, lead zirconium titanate, lead lanthanum zirconium titanate, lead niobate, lead tantalate, potassium strontium niobate, sodium barium niobate/potassium phosphate, potassium niobate, lithium niobate, lithium tantalite, lanthanum tantalate, barium calcium zirconium titanate and/or sodium nitrate.

10. The layer of claim 1 , wherein the at least one electronically tunable ceramic material comprises barium strontium titanate.

11. The layer of claim 10 , wherein the barium strontium titanate is of the formula BaxSr1−xTiO3, where x is from about 0.15 to about 0.6.

12. The layer of claim 1 , wherein the metal silicate comprises Mg2SiO4, CaSiO3, BaSiO3 and/or SrSiO3.

13. The layer of claim 1 , wherein the at least one additional ceramic material comprises from about 3 to about 65 weight percent of the tape cast layer and comprises oxides of at least two metals selected from Be, Mg, Ca, Sr, Ba, Ra, Li, Na, K, Rb, Cs, Al, Zr, Zn, Fr, B, Fe, Mn, Cu, Cr, Ti, Ta, Nb, Mo, W, Ni, Pd, Pb, Bi, Si, Sn, Hf and rare earths.

14. The layer of claim 13 , wherein the metal oxides comprise at least two metals selected from Mg, Si, Ca, Zr, Ti and Al.

15. The layer of claim 13 , wherein the metal oxides are selected from Mg2SiO4, MgO, CaTiO3, MgZrSrTiO6, MgTiO3, MgAl2O4, WO3, SnTiO4, ZrTiO4, CaSiO3, CaSnO3, CaWO4, CaZrO3, MgTa2O6, MgZrO3, MnO2, PbO, Bi2O3 and La2O3.

16. The layer of claim 1 , wherein the tape cast layer further comprises at least one low loss glass additive.

17. The layer of claim 16 , wherein the low loss glass additive comprises from about 0.1 to about 60 weight percent of the tape cast layer.

Assignments (6)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 5, 2020
From: BLACKBERRY LIMITED
To: NXP USA, INC.
Reel/Frame 052095/0443 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 30, 2013
From: RESEARCH IN MOTION RF, INC.
To: RESEARCH IN MOTION CORPORATION
Reel/Frame 030909/0908 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 30, 2013
From: RESEARCH IN MOTION CORPORATION
To: BLACKBERRY LIMITED
Reel/Frame 030909/0933 →
CHANGE OF NAME Recorded Jul 31, 2012
From: PARATEK MICROWAVE, INC.
To: RESEARCH IN MOTION RF, INC.
Reel/Frame 028686/0432 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 14, 2005
From: CHIA, LUNA H.; ZHANG, XUBAI; SANGUPTA, LOUISS C.
To: PARATEK MICROWAVE, INC.
Reel/Frame 017011/0532 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 14, 2005
From: CHIU, LUNA H.; ZHANG, XUBEI; SENGUPTA, LOUISE C.
To: PARATEK MICROWAVE, INC.
Reel/Frame 017011/0545 →