Y5V dielectric composition
View Patent ↗Multilayer ceramic chip capacitors which satisfy Y5V requirements and which are compatible with reducing atmosphere sintering conditions so that non-noble metals such as nickel, copper, and alloys thereof may be used for internal and external electrodes are made in accordance with the invention. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers comprise BaTiO 3 doped with other metal oxides such as MgO, CaO, ZnO, MnO 2 , ZrO 2 , SiO 2 , Nd 2 O 3 , Nb 2 O 5 , and Y 2 O 3 .
1. A method of forming an electronic component comprising: applying particles of a dielectric material to a substrate and firing the substrate at a temperature sufficient to sinter the dielectric material, wherein the dielectric material comprises a blend (in weight percent) of
Component
BaO
TiO 2
MgO
CaO
ZnO
MnO 2
Wt %
52–70
25–33
0.02–1.5
0.01–1.5
0–1.5
0.02–1.5
Component
ZrO 2
SiO 2
Nd 2 O 3
Nb 2 O 5
Y 2 O 3
Wt %
2–12
0.01–2.5
0.02–2.5
0.02–2.5
0.02–2.5.
2. The method of claim 1 wherein the firing is conducted at a temperature of 1100–1400° C.
3. The method of claim 1 wherein the firing is conducted at a temperature of 1200–1300° C.
4. The method of claim 1 wherein the firing is conducted at a temperature of 1225–1275° C.
5. The method of claim 1 wherein the dielectric material has a dielectric constant of 14000–20000.
6. The method of claim 1 wherein the dielectric material has a dielectric constant of 15000–19000.
7. The method of claim 1 wherein the electronic component has a dielectric constant of at least about 8000.
8. A method of forming an electronic component comprising: applying particles of a dielectric material to a substrate and firing the substrate at a temperature sufficient to sinter the dielectric material, wherein the dielectric material comprises:
Component
BaO
TiO 2
MgO
CaO
ZnO
MnO 2
ZrO 2
SiO 2
Nd 2 O 3
Nb 2 O 5
Y 2 O 3
Wt %
58–67
28–31
0.06–0.12
0.01–0.07
0.01–0.80
0.10–0.70
3–8
0.01–0.10
0.20–0.80
0.04–0.12
0.20–1.
9. A method of forming an electronic component comprising: applying particles of a dielectric material to a substrate and firing the substrate at a temperature sufficient to sinter the dielectric material, wherein the dielectric material comprises:
Component
BaO
TiO 2
MgO
CaO
ZnO
MnO 2
ZrO 2
SiO 2
Nd 2 O 3
Nb 2 O 5
Y 2 O 3
Wt %
58–64
29–30
0.07–0.1
0.02–0.05
0.1–0.5
0.2–0.5
4–7
0.02–0.08
0.3–0.7
0.05–0.1
0.4–0.7.
10. A method of forming an electronic component comprising:
a. applying to a first substrate a green dielectric composition to form a green tape layer, the green dielectric composition comprising an oxide component and an organic vehicle,
b. applying to the green tape a green paste comprising a base metal to form an internal electrode layer,
c. repeating steps a and b until a desired number of layers is obtained to form a stack heating the stack to remove the organic vehicle,
d. firing the stack to sinter the metal in the internal electrode and fuse the oxides in the dielectric material, wherein the internal electrode and the dielectric material each have a thickness,
e. wherein the oxide component comprises
Component
BaO
TiO 2
MgO
CaO
ZnO
MnO 2
ZrO 2
SiO 2
Nd 2 O 3
Nb 2 O 5
Y 2 O 3
Wt %
52–70
25–33
0.02–1.5
0.01–1.5
0–1.5
0.02–1.5
2–12
0.01–2.5
0.02–2.5
0.02–2.5
0.02–2.5.
11. The method of claim 10 wherein the dielectric material has a dielectric constant of 14000 to 20000.
12. The method of claim 10 wherein the electronic component, after firing, has a dielectric constant of at least about 8000.
13. The method of claim 10 wherein the dielectric material, after firing, has a thickness of about 1 μm to about 10 μm.
14. The method of claim 10 wherein the firing is conducted at a temperature of 1225° C. to about 1250° C.
15. The method of claim 10 wherein the oxide component comprises
Component
BaO
TiO 2
MgO
CaO
ZnO
MnO 2
ZrO 2
SiO 2
Nd 2 O 3
Nb 2 O 5
Y 2 O 3
Wt %
58–64
29–30
0.07–0.1
0.02–0.05
0.1–0.5
0.2–0.5
4–7
0.02–0.08
0.3–0.7
0.05–0.1
0.4–0.7.
16. A multilayer ceramic chip capacitor comprising alternately stacked layers of a dielectric material and an internal electrode material comprising a transition metal other than Ag, Au, Pd, or Pt, the dielectric material comprising a sintered blend of
Component
BaO
TiO 2
MgO
CaO
ZnO
MnO 2
Wt %
52–70
25–33
0.02–1.5
0.01–1.5
0–1.5
0.02–1.5
Component
ZrO 2
SiO 2
Nd 2 O 3
Nb 2 O 5
Y 2 O 3
Wt %
2–12
0.01–2.5
0.02–2.5
0.02–2.5
0.02–2.5.
17. The multilayer ceramic chip capacitor of claim 16 where the internal electrode material comprises an alloy containing nickel.
18. The multilayer ceramic chip capacitor of claim 16 where the dielectric material maintains a dielectric constant of from about 14000 to 20000.
19. The multilayer ceramic chip capacitor of claim 16 wherein the dielectric material comprises a sintered blend of
Component
BaO
TiO 2
MgO
CaO
ZnO
MnO 2
ZrO 2
SiO 2
Nd 2 O 3
Nb 2 O 5
Y 2 O 3
Wt %
58–64
29–30
0.07–0.1
0.02–0.05
0.1–0.5
0.2–0.5
4–7
0.02–0.08
0.3–0.7
0.05–0.1
0.4–0.7.
20. A multilayer ceramic chip capacitor comprising a dielectric material having the formula
(Ba 0.9894 Ca 0.0026 Y 0.0054 Nd 0.0072 ) 0.971 (Ti 0.8709 Zr 0.1049 Mg 0.0047 Nb 0.0014 Mn 0.0105 Y 0.0053 Si 0.0023 )O 2.9797.