Reduced dielectric breakdown/leakage semiconductor device and a method of manufacturing the same, integrated circuit, electro-optical device, and electric apparatus
View Patent ↗Aspects of the invention provide a method, in a semiconductor device, such as a thin film transistor, a technology capable of preventing or reducing the electric field concentration at the edge section of the semiconductor film to enhance the reliability. The method of manufacturing a semiconductor device according to the invention can include a first step of forming a semiconductor film discretely on an insulation substrate, a second step of covering the semiconductor film including an edge section of the semiconductor film with a first insulation film, a third step of opening the first insulation film above the semiconductor film excluding the edge section of the semiconductor film, a fourth step of forming a second insulation film thinner than the first insulation film on the semiconductor film corresponding to at least the opening of the first insulation film, and a fifth step of forming an electrode wiring film on the second insulation film.
1. A method of manufacturing a semiconductor device, comprising:
forming a semiconductor film discretely on an insulation substrate; forming a first insulation film on the semiconductor film, the first insulation film covering a surface and a side wall of the semiconductor film;
providing an opening of the first insulation film to the semiconductor film, the opening being smaller than the semiconductor film and within a surface perimeter of the semiconductor film;
forming a second insulation film that is thinner than the first insulation film on the semiconductor film corresponding to the opening of the first insulation film; and
forming an electrode wiring film on the second insulation film and a part of the first insulation film.
2. The method of manufacturing a semiconductor device according to claim 1 , forming the semiconductor film further including:
forming the semiconductor film on the insulation substrate;
polycrystallizing the semiconductor film by a heat treatment;
planarizing a surface of the polycrystallized semiconductor film; and
patterning the polycrystallized semiconductor film to form an element forming region.
3. The method of manufacturing a semiconductor device according to claim 1 , forming the second insulating film further including:
forming the second insulation film by thermal oxidation of the semiconductor film.
4. The method of manufacturing a semiconductor device according to claim 1 , forming the second insulating film further including:
forming the second insulation film by depositing an insulation material on the semiconductor film.