Multilayer film-coated substrate and process for its production
View Patent ↗A multilayer film-coated substrate having the stress of the film relaxed by depositing a multilayer film comprising a metal oxide film and a silicon oxide film on a substrate at a high speed by a sputtering method using a conductive sputtering material, and a process for producing a multilayer film-coated substrate having such a low stress, are presented. A multilayer film-coated substrate comprising a substrate and at least a metal oxide film and a silicon oxide film laminated thereon repeatedly at least once, wherein at least one layer of said metal oxide film is a metal oxide film deposited by sputtering by using, as the target material, a metal oxide MO X which is deficient in oxygen than the stoichiometric composition, to have the oxygen deficiency resolved, and the stress of the multilayer film is from −100 MPa to +100 MPa.
1. A multilayer film-coated substrate comprising:
a substrate; and
a multilayer film laminated on the substrate and comprising a plurality of metal oxide films and a plurality of silicon oxide films, the silicon oxide films and the metal oxide films being alternately laminated and forming at least twenty layers,
wherein said plurality of metal oxide films includes at least one metal oxide film layer deposited by sputtering with a target material comprising a metal oxide MO X (where a metal M is at least one metal selected from the group consisting of Ti, Nb, Ta, Mo, W, Zr and Hf, said metal oxide MO X has a stoichiometric composition which is deficient in oxygen, said sputtering is carried out under conditions in which oxygen deficiency is resolved, the multilayer film has a stress of from −100 MPa to +100 MPa, the substrate has a thickness of from 0.05 to 0.4 mm, and the substrate after depositing the multilayer film structure has a bow of from −20 to +20 μm.
2. The multilayer film-coated substrate according to claim 1 , wherein when said metal M in the metal oxide MO X is Nb and/or Ta, X is 2<X<2.5.
3. The multilayer film-coated substrate according to claim 1 , wherein when said metal M in the metal oxide MO X is at least one metal selected from the group consisting of Ti, Zr and Hf, X is l<X<2.
4. The multilayer film-coated substrate according to claim 1 , wherein when said metal M in the metal oxide MO X is Mo and/or W, X is 2<X<3.
5. The multilayer film-coated substrate according to claim 1 , wherein the stress of the multilayer film is from −60 MPa to +60 MPa.
6. The multilayer film-coated substrate according to claim 1 , wherein the multilayer film is formed over an area of from 0.01 to 900 cm 2 .
7. The multilayer film-coated substrate according to claim 6 , wherein the film is formed over an area of from 1 to 900 cm 2 .
8. The multilayer film-coated substrate according to claim 1 , wherein each of the metal oxide films has a thickness of from 10 nm to 10 μm, and each of the silicon oxide film has a thickness of from 10 nm to 10 μm.
9. The multilayer film-coated substrate according to claim 1 , wherein the multilayer film has a total thickness of from 20 nm to 2000 μm.
10. The multilayer film-coated substrate according to claim 1 , wherein the multilayer film has a total thickness of from 20 to 5000 nm, and after depositing the film, a bow of the substrate differs from the bow of the substrate before depositing the multi-layer film by an absolute value of at most 25 μm.
11. The multilayer film-coated substrate according to claim 1 , wherein after depositing the film, a bow of the substrate differs from the bow of the substrate before depositing the multi-layer film by an absolute value, which absolute value, when divided by the film thickness, is at most 10.
12. The multilayer film-coated substrate according to claim 1 , wherein the multilayer-coated substrate is a dichroic mirror, an ultraviolet filter, an infrared filter, a band pass filter or a gain-flattening filter.
13. The multilayer film-coated substrate according to claim 1 , further comprising an interlayer film incorporated between one of the metal oxide films and one of the silicon oxide films, wherein the interlayer film comprises a material different from the metal oxide films and silicon oxide films.
14. A multilayer film-coated substrate comprising:
a substrate; and
a multilayer film laminated on the substrate and comprising a plurality of metal oxide films and a plurality of silicon oxide films, the silicon oxide films and the metal oxide films being alternately laminated and forming at least twenty layers,
wherein said plurality of metal oxide films includes at least one metal oxide film layer deposited by sputtering with a target material comprising a metal oxide MO X where a metal M is at least one metal selected from the group consisting of Ti, Nb, Ta, Mo, W, Zr and Hf, said metal oxide MO X has a stoichiometric composition which is deficient in oxygen, said sputtering is carried out under conditions in which oxygen deficiency is resolved, the multilayer film has a stress of from −100 MPa to +100 MPa, the substrate has a thickness of from 0.5 to 2 mm, and the substrate after depositing the multilayer film has a bow of from −100 to +100μm.
15. The multilayer film-coated substrate according to claim 14 , wherein when said metal M in the metal oxide MO X is Nb and/or Ta, X is 2<X<2.5.
16. The multilayer film-coated substrate according to claim 14 , wherein when said metal M in the metal oxide MO X is at least one metal selected from the group consisting of Ti, Zr and Hf, X is 1<X<2.
17. The multilayer film-coated substrate according to claim 14 , wherein when said metal M in the metal oxide MO X is Mo and/or W, X is 2<X<3.
18. The multilayer film-coated substrate according to claim 14 , wherein the stress of the multilayer film is from −60 MPa to +60 MPa.
19. The multilayer film-coated substrate according to claim 14 , wherein the multilayer film is formed over an area of from 0.01 to 900 cm 2 .
20. The multilayer film-coated substrate according to claim 19 , wherein the film is formed over an area of from 1 to 900 cm 2 .
21. The multilayer film-coated substrate according to claim 14 , wherein each of the metal oxide films has a thickness of from 10 nm to 10 μm, and each of the silicon oxide film has a thickness of from 10 nm to 10 μm.
22. The multilayer film-coated substrate according to claim 14 , wherein the multilayer film has a total thickness of from 20 nm to 2000 μm.
23. The multilayer film-coated substrate according to claim 14 , wherein the multilayer film has a total thickness of from 20 to 5000 nm, and after depositing the film, a bow of the substrate differs from the bow of the substrate before depositing the multi-layer film by an absolute value of at most 25 μm.
24. The multilayer film-coated substrate according to claim 14 , wherein after depositing the film, a bow of the substrate differs from the bow of the substrate before depositing the multi-layer film by an absolute value, which absolute value, when divided by the film thickness, is at most 10.
25. The multilayer film-coated substrate according to claim 14 , wherein the multilayer-coated substrate is a dichroic mirror, an ultraviolet filter, an infrared filter, a band pass filter or a gain-flattening filter.
26. The multilayer film-coated substrate according to claim 14 , further comprising at least one interlayer film incorporated between one of the metal oxide films and one of the silicon oxide films, wherein the interlayer film comprises a material different from the metal oxide films and silicon oxide films.