IP Library Patent Application 11113147
Patent Application
App. No. 11/113,147

Semiconductor wafer, semiconductor chip, and manufacturing method of semiconductor device

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Quick Facts
Patent No.
US None
App. No.
11/113,147
Abstract

By using a small number of needles and contact terminals at burn-in, electric contact check is performed between each needle and each terminal provided in each semiconductor chip, and thereby the yield of assembled products can be improved. A packaging structure in which, for example, a volatile memory chip and a nonvolatile memory chip are formed is assembled in accordance with a production scheme in which burn-in of each memory chip is performed while still under the state of a semiconductor wafer, and by forming the packaged structure using the good volatile memory chip subjected to burn-in and likewise, also, the nonvolatile memory chip. At this burn-in, contact check is performed by bringing a needle, provided in a burn-in board, into contact with, for example, six test-only signal terminals of a test circuit formed on each semiconductor chip.

Claims (13)

1 - 8 . (canceled)

9 . A manufacturing method of a semiconductor device, the method comprising:

manufacturing semiconductor wafers including first semiconductor chips;

performing burn-in of the semiconductor wafers;

cutting the semiconductor wafers to produce a batch of first semiconductor chips; and

assembling ones of the first semiconductor chips to manufacture the semiconductor device.

10 . A manufacturing method of a semiconductor device according to claim 9 ,

wherein the performance of the burn-in comprises:

performing a contact check for judging electric connection/non-connection between each needle connected to a test apparatus and each terminal provided in each of the first semiconductor chips of the semiconductor wafer.

11 . A manufacturing method of a semiconductor device according to claim 9 ,

wherein the assembling includes:

forming a stacked arrangement of the ones of the first semiconductor chips on a substrate in the semiconductor device.

12 . A manufacturing method of a semiconductor device according to claim 11 , wherein the substrate is a wiring substrate.