P-channel MOS transistor and fabrication process thereof
View Patent ↗A p-channel MOS transistor includes a strained SOI substrate formed of a SiGe mixed crystal layer and a strained Si layer formed on the SiGe mixed crystal layer via an insulation film, a channel region being formed in the strained Si layer, a gate electrode formed on the strained Si layer in correspondence to the channel region via a gate insulation film, and first and second p-type diffusion regions formed in the strained Si layer at respective first and second sides of the channel region, wherein the strained Si layer has first and second sidewall surfaces respectively at the first and second sides thereof, a first SiGe mixed crystal region being formed epitaxially to the SiGe mixed crystal layer in contact with the first sidewall surface, a second SiGe mixed crystal region being formed epitaxially to the SiGe mixed crystal layer in contact with the second sidewall surface, the first and second SiGe mixed crystal regions being in lattice matching with the strained silicon layer respectively at the first and second sidewall surfaces.
1. A p-channel MOS transistor, comprising:
a strained SOI substrate, said strained SOI substrate comprising a SiGe mixed crystal layer and a strained Si layer formed on said SiGe mixed crystal layer via an insulation film, a channel region being included in said strained Si layer;
a gate electrode formed on said strained Si layer in correspondence to said channel region via a gate insulation film; and
first and second p-type diffusion regions formed in said strained Si layer at respective first and second sides of said channel region,
said strained Si layer having first and second sidewall surfaces respectively at said first and second sides thereof,
a first SiGe mixed crystal region in contact with said first sidewall surface and in continuation to said SiGe mixed crystal layer through a first opening formed in said insulation film,
a second SiGe mixed crystal region in contact with said second sidewall surface and in continuation to said SiGe mixed crystal layer through a second opening formed in said insulation film,
said first and second SiGe mixed crystal regions being in lattice matching with said strained silicon layer respectively at said first and second sidewall surfaces.
2. The p-channel MOS transistor as claimed in claim 1 , wherein said strained Si layer accumulates therein an in-plane tensile stress acting in a plane of said strained Si layer and further a uniaxial tensile stress acting in a direction perpendicular to said plane of said strained Si layer.
3. The p-channel MOS transistor as claimed in claim 1 , wherein each of said first and second SiGe mixed crystal regions is formed so as to reach at least a surface of said strained Si layer.
4. The p-channel MOS transistor as claimed in claim 1 , wherein p-type diffusion regions are formed at respective upper parts of said first and second SiGe mixed crystal regions as source and drain regions.
5. The p-channel MOS transistor as claimed in claim 1 , wherein said SiGe mixed crystal layer is substantially free from strain at least in an upper part thereof.
6. The p-channel MOS transistor as claimed in claim 1 , wherein said SiGe mixed crystal layer is formed epitaxially on a silicon substrate.
7. A method of fabricating a p-channel MOS transistor, said p-channel MOS transistor comprising a strained SOI substrate, said strained SOI substrate comprising a SiGe mixed crystal layer and a strained Si layer formed on said SiGe mixed crystal layer via an insulation film, a channel region being included in said strained Si layer, a gate electrode formed on said strained Si layer in correspondence to said channel region via a gate insulation film, and first and second p-type diffusion regions formed in said strained Si layer at respective first and second sides of said channel region, said method comprising the steps of:
forming first and second openings in said strained Si layer respectively at said first and second sides so as to expose said SiGe mixed crystal layer, said first and second openings being defined respectively by first and second sidewall surfaces; and
growing first and second SiGe mixed crystal regions respectively at said first and second openings epitaxially, such that said first SiGe mixed crystal region makes contact with said first sidewall surface and such that said second SiGe mixed crystal region makes contact with said second sidewall surface.