Method for improving Mg doping during group-III nitride MOCVD
View Patent ↗A method for improving Mg doping of Group III-N materials grown by MOCVD preventing condensation in the gas phase or on reactor surfaces of adducts of magnesocene and ammonia by suitably heating reactor surfaces between the location of mixing of the magnesocene and ammonia reactants and the Group III-nitride surface whereon growth is to occur.
1. A method for controllably doping a Group III-nitride material with Mg comprising:
heating a plurality of reactor surfaces to a first temperature, the first temperature being higher than a magnesium precursor gas-ammonia adduct condensation temperature;
heating at least one precursor gas to a second temperature prior to mixing of the at least one precursor gas, a magnesium precursor gas, and an ammonia gas, said second temperature being sufficiently high to provide a mixed gas temperature following mixing of the at least one precursor gas, the magnesium precursor gas, and the ammonia gas that is higher than the magnesium precursor gas-ammonia adduct condensation temperature;
mixing the at least one precursor gas, the magnesium precursor gas, and the ammonia gas to form a mixed gas; and
reacting the mixed gas with a surface of the Group III nitride material, thereby depositing a magnesium-doped Group III nitride layer.
2. The method of claim 1 , wherein the magnesium precursor gas is a magnesocene.
3. The method of claim 2 , wherein the magnesocene is selected from the group consisting of bis(cyclopentadienyl) magnesium, bis(methylcyclopentadienyl) magnesium, bis(ethylcyclopentadienyl) magnesium, and bis(n-propylcyclopentatienyl) magnesium.
4. The method of claim 1 , wherein the at least one precursor gas is selected from the group consisting of the magnesium precursor gas, a Group III precursor gas, the ammonia gas, and a carrier gas.
5. A method for controllably doping a Group III-nitride material with Mg comprising:
heating a plurality of reactor surfaces to a first temperature, the first temperature being higher than a magnesium precursor gas-ammonia adduct condensation temperature;
controlling a mixed gas temperature, a pressure of a magnesium precursor gas, and a pressure of ammonia such that a combination of the mixed gas temperature is sufficiently high, the pressure of the magnesium precursor gas is sufficiently low, and the pressure of the ammonia is sufficiently low to prevent condensation of the magnesium precursor gas-ammonia adduct;
reacting a mixed gas comprising a Group III precursor gas, the magnesium precursor gas, and ammonia with a surface of the Group III nitride material, thereby depositing thereon a magnesium-doped Group III nitride layer.
6. The method of claim 5 , wherein the magnesium precursor gas is a magnesocene.
7. The method of claim 6 , wherein the magnesocene is selected from the group consisting of bis(cyclopentadienyl) magnesium, bis(methylcyclopentadienyl) magnesium, bis(ethylcyclopentadienyl) magnesium, and bis(n-propylcyclopentatienyl) magnesium.
8. A method for controllably doping a Group III-nitride material with Mg comprising:
heating a plurality of reactor surfaces to a first temperature, the first temperature being higher than a magnesocene-ammonia adduct condensation temperature;
heating at least one precursor gas to a second temperature prior to mixing of the at least one precursor gas, a magnesocene gas, and an ammonia gas, the second temperature being sufficiently high to provide a mixed gas temperature following mixing of the at least one precursor gas, the magnesocene gas, and the ammonia gas that is higher than the magnesocene-ammonia adduct condensation temperature;
mixing the at least one precursor gas, the magnesocene gas and the ammonia gas to form a mixed gas; and
reacting the mixed gas with a surface of the Group III nitride material, thereby depositing a magnesium-doped Group III nitride layer.
9. The method of claim 8 , wherein a magnesocene of the magnesocene gas is selected from the group consisting of bis(cyclopentadienyl) magnesium, bis(methylcyclopentadienyl) magnesium, bis(ethylcyclopentadienyl) magnesium, and bis(n-propylcyclopentatienyl) magnesium.
10. The method of claim 8 , wherein the at least one precursor gas is selected from the group consisting of the magnesocene gas, the Group III precursor gas, the ammonia gas, and a carrier gas.