Electrode contact structure
View Patent ↗An electrode contact structure having a high reliability is provided. The structure comprises an Au electrode formed on a GaAs substrate, a contact hole open in an insulating film on the Au electrode, and an Al wiring being in contact with the Au electrode through the contact hole. The difference between the height of the portion having the maximum thickness of the Al wiring and the height of the portion having the minimum thickness of the Al wiring is substantially equal to or smaller than the thickness of the insulating film. It is preferable that the thickness of the Au electrode is in the range of 0.1-0.2 μm, the overlapped width between the peripheral portion of the Au electrode and the insulating film is 1 μm or less, or the area of the contact hole is at least 16 μm 2 or more.
1. An electrode contact structure, comprising:
a substrate;
an Au 4 Al electrode formed on the substrate;
an insulating film formed on the substrate and the Au 4 Al electrode;
a contact hole opened in the insulating film on the Au 4 Al electrode; and
an Al wiring being in contact with the Au 4 Al electrode through the contact hole;
wherein the Au 4 Al electrode and the Al wiring form a structure consisting essentially of Au 4 Al to the substantial exclusion of Au and Au 5 Al 2 and which includes means for suppressing formation of Au 5 Al 2 .
2. An electrode contact structure according to claim 1
wherein the Au 4 Al electrode has a thickness in a range of 0.1-0.2 μm.
3. An electrode contact structure according to claim 1
wherein an overlap in width between a peripheral portion of the Au 4 Al electrode and the insulating film is 1 μm or less.
4. An electrode contact structure, according to claim 1 , wherein
the contact hole has an area of at least 16 μm 2 .
5. The electrode contact structure according to claim 2 , 3 or 4 , wherein the shape of the Au 4 Al electrode is square, circular, ellipsoidal or elliptical.
6. An electrode contact structure according to claim 1 , wherein a difference in height between a thickest portion of the Al wiring on the Au 4 Al electrode and a thinnest portion of the Al wiring on the Au 4 Al electrode is substantially equal to or smaller than a thickness of the insulating film.
7. An electrode contact structure, comprising:
a substrate
an electrode consisting of Au 4 Al formed on the substrate;
an insulating film formed on the substrate and the electrode;
a contact hole opened in the insulating film on the electrode; and
an Al wiring being in contact with the electrode through the contact hole.
8. An electrode contact structure comprising:
a substrate;
an Au electrode, formed on the substrate, the Au electrode being composed of a layer structure including an Au film, a barrier metal film deposited on the Au film, and an Au 4 Al film formed on the barrier metal film;
an insulating film formed on the substrate and the Au electrode;
a contact hole opened in the insulating film on the Au electrode; and
an Al wiring being in contact with the Au 4 Al film of the Au electrode through the contact hole;
wherein the layer structure has a total thickness in the range of 0.1-0.2 μm.
9. An electrode contact structure according to claim 8
wherein an overlap in width between a peripheral portion of the Au electrode and the insulating film is 1 μm or less.
10. An electrode contact structure according to claim 8
wherein the contact hole has an area of at least 16 μm 2 .
11. The electrode contact structure according to claim 8 , 9 or 10 , wherein the barrier metal film consists of a refractory metal.
12. A self-scanning light-emitting element array using three-terminal light-emitting thyristors each thereof being PNPN-structure, wherein an electrical contact structure of the three-terminal thyristor comprises the electrode contact structure according to any one of claims 1 , 2 , 3 , 4 , 7 , 8 , 9 or 10 .