Semiconductor device with level converter having signal-level shifting block and signal-level determination block
View Patent ↗A semiconductor device including a level converter (LSC) is disclosed. The level converter comprises a voltage-up circuit (LSC 1 ) that operates on low voltage of power supply (VDD) and steps up voltage enough to drive the level converter and a level converter circuit (LSC 2 ) that operates on high voltage of power supply (VDDQ). The voltage-up circuit is capable of constantly generating 2×VDD so that the level converter can convert a low voltage of power supply (VDD) below 1 V to VDDQ. This voltage-up circuit can be configured only with MOSFET transistors produced by thin oxide film deposition, thus enabling high-speed operation. To facilitate designing a circuit for preventing a leakage current from occurring in the level converter during sleep mode of a low-voltage-driven circuit (CB 1 ), the level converter circuit (LSC 2 ) includes a leak protection circuit (LPC) that exerts autonomous control for leak prevention, dispensing with external control signals.
1. A semiconductor device comprising:
a first circuit which operates on a first voltage of power supply and outputs a first signal with the amplitude of the first voltage of power supply;
a second circuit which operates a second voltage of power supply higher than the first voltage of power supply; and
a level converter which operates on the first and second voltages of power supply, converts said first signal to a second signal with the amplitude of said second voltage of power supply, and outputs the second signal to said second circuit, wherein
said level converter includes a signal-level shifting block including MOSFETs of a first gate oxide film thickness and a signal-level determination block including MOSFETs of a second gate oxide film thickness which is thicker than the first gate oxide film thickness,
said signal-level shifting block generates a third signal that shifts between said second voltage of power supply and said second voltage less said first voltage by boosting the voltage level of said first signal through a capacitor and a signal of inversion of the level of said first voltage of power supply by inverting said first signal;
said signal-level determination block includes an n-channel MOSFET and a p-channel MOSFET of said second gate oxide film thickness and connected in series to a ground potential and said second voltage of power supply, level determination is performed by inputting said signal of inversion of the level of said first voltage of power supply to the gate of said n-channel MOSFET and said third signal to the gate of said p-channel MOSFET.
2. A semiconductor device according to claim 1 , wherein the level converter is placed between the first circuit operating on the low voltage power supply and the second circuit operating on the high voltage power supply.
3. A semiconductor device according to claim 1 , wherein the signal of inversion of the level of said first voltage of power supply is inverted by an inverter consisting of a PMOS transistor and an NMOS transistor.
4. A semiconductor device according to claim 1 , wherein the capacitor is formed by short-circuiting source and drain electrodes and gate electrodes of a pair of NMOS transistors.
5. A semiconductor device according to claim 4 , wherein a pair of PMOS transistors are connected to output terminals of the capacitor.
6. A semiconductor device according to claim 5 , wherein the pair of PMOS transistors are cross coupled.
7. A semiconductor device according to claim 1 , wherein the p-channel MOSFET is turned on completely or in a half-on state, and the n-channel MOSFET is turned off completely or in a half-on state.
8. A semiconductor device according to claim 1 , wherein the signal-level determination block includes a leak protection circuit.
9. A semiconductor device according to claim 8 , wherein the leak protection circuit includes two inverters.
10. A semiconductor device according to claim 1 , the first circuit includes MOSFETs of the first gate oxide film thickness and the second circuit includes MOSFETs of the second gate oxide film thickness which is thicker than the first gate oxide film thickness.
11. A semiconductor device comprising:
a first circuit which operates on a first voltage of power supply and outputs a first signal with the amplitude of the first voltage of power supply;
a second circuit which operates a second voltage of power supply higher than the first voltage of power supply; and
a level converter which operates on the first and second voltages of power supply, converts said first signal to a second signal with the amplitude of said second voltage of power supply, and outputs the second signal to said second circuit, wherein
the first circuit includes MOSFETs of a first gate oxide film thickness and the second circuit includes MOSFETs of a second gate oxide film thickness which is thicker than the first gate oxide film thickness,
said level converter includes a signal-level shifting block and a signal-level determination block,
said signal-level shifting block generates a third signal that shifts between said second voltage of power supply and said second voltage less said first voltage by boosting the voltage level of said first signal through a capacitor and a signal of inversion of the level of said first voltage of power supply by inverting said first signal;
said signal-level determination block includes an n-channel MOSFET and a p-channel MOSFET of said second gate oxide film thickness and connected in series to a ground potential and said second voltage of power supply, level determination is performed by inputting said signal of inversion of the level of said first voltage of power supply to the gate of said n-channel MOSFET and said third signal to the gate of said p-channel MOSFET.
12. A semiconductor device according to claim 11 , wherein the level converter is placed between the first circuit operating on the low voltage power supply and the second circuit operating on the high voltage power supply.
13. A semiconductor device according to claim 11 , wherein the signal of inversion of the level of said first voltage of power supply is inverted by an inverter consisting of a PMOS transistor and an NMOS transistor.
14. A semiconductor device according to claim 11 , wherein the capacitor is formed by short-circuiting source and drain electrodes and gate electrodes of a pair of NMOS transistors.
15. A semiconductor device according to claim 14 , wherein a pair of PMOS transistors are connected to output terminals of the capacitor.
16. A semiconductor device according to claim 15 , wherein the pair of PMOS transistors are cross coupled.
17. A semiconductor device according to claim 11 , wherein the p-channel MOSFET is turned on completely or in a half-on state, and the n-channel MOSFET is turned off completely or in a half-on state.
18. A semiconductor device according to claim 11 , wherein the signal-level determination block includes a leak protection circuit.
19. A semiconductor device according to claim 18 , wherein the leak protection circuit includes two inverters.
20. A semiconductor device comprising:
a first circuit which operates on a first voltage of power supply and outputs a first signal with the amplitude of the first voltage of power supply;
a second circuit which operates a second voltage of power supply higher than the first voltage of power supply; and
a level converter which operates on the first and second voltages of power supply, converts said first signal to a second signal with the amplitude of said second voltage of power supply, and outputs the second signal to said second circuit, wherein
said level converter includes a signal-level shifting block and a signal-level determination block,
said signal-level shifting block includes MOSFETs of a first gate oxide film thickness, and generates a third signal that shifts between said second voltage of power supply and said second voltage less said first voltage by boosting the voltage level of said first signal through a capacitor and a signal of inversion of the level of said first voltage of power supply by inverting said first signal;
said signal-level determination block includes an n-channel MOSFET of a second gate oxide film thickness which is thicker than the first gate oxide film thickness, and a p-channel MOSFET of said second gate oxide film thickness, said n-channel and p-channel MOSFET are connected in series to a ground potential and said second voltage of power supply, level determination is performed by inputting said signal of inversion of the level of said first voltage of power supply to the gate of said n-channel MOSFET and said third signal to the gate of said p-channel MOSFET.