Systems and methods for nanowire growth and harvesting
View Patent ↗The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.
1. A method for producing nanowires, comprising:
depositing one or more nucleating particles on a substrate material;
heating the nucleating particles to a first temperature;
contacting the nucleating particles with a first precursor gas mixture to create a liquid alloy droplet to initiate nanowire growth;
heating the alloy droplet to a second temperature, wherein the first temperature is higher than the second temperature; and
contacting the alloy droplet with a second precursor gas mixture,
whereby nanowires are grown at the site of the alloy droplet.
2. The method of claim 1 , wherein the substrate material is crystallographic.
3. The method of claim 2 , wherein the growing occurs epitaxially.
4. The method of claim 2 , wherein the substrate material comprises silicon.
5. The method of claim 1 , wherein the substrate material is amorphous.
6. The method of claim 5 , wherein the substrate material comprises SiO 2 , Si 3 N 4 or alumina.
7. The method of claim 1 , wherein the growing is out of a plane of the substrate material.
8. The method of claim 1 , wherein the nanowires are capable of transporting electrical charge.
9. The method of claim 1 , wherein the first temperature is at least 50° C. above the second temperature.
10. The method of claim 1 , wherein the nucleating particles comprise a metal that reacts with both the first precursor gas mixture and the second precursor gas mixture to form a eutectic from which Si precipitates.
11. The method of claim 10 , wherein the nucleating particles comprise Au, Pt, Fe, Ti, Ga, Ni or Sn.
12. The method of claim 1 , wherein the nucleating particles comprise a Au colloid or Au film.
13. The method of claim 1 , wherein the first precursor gas mixture comprises SiH 4 , SiCl 4 or SiH 2 Cl 2 , and further comprises B 2 H 6 , POCl 3 or PH 3 .
14. The method of claim 1 , wherein the second precursor gas mixture comprises SiH 4 , Si 2 H 6 , SiCl 4 or SiH 2 Cl 2 , and further comprises B 2 H 6 , POCl 3 or PH 3 .
15. The method of claim 1 , wherein said contacting in (c) or (e) occurs via plasma enhanced sputter deposition.
16. The method of claim 1 , further comprising:
(f) contacting the growing nanowires with one or more additional precursor gas mixtures comprising SiH 4 , Si 2 H 6 , SiCl 4 or SiH 2 Cl 2 and further comprising B 2 H 6 , POCl 3 or PH 3 to grow the nanowires to a desired length.
17. The method of claim 16 , wherein said contacting in (f) occurs via plasma enhanced sputter deposition.
18. A method for producing nanowires, comprising:
depositing one or more nucleating particles on a substrate material;
heating the nucleating particles to a first temperature at which a first precursor gas has a eutectic phase with the nucleating particles;
contacting the nucleating particles with a first precursor gas mixture comprising the first precursor gas to initiatie nanowire growth, wherein the first precursor gas mixture comprises at least one atomic species that aids in orienting the nanowires;
contacting the nucleating particles with a second precursor gas mixture comprising a second precursor gas that has a eutectic phase with the nucleating particles at a second temperature that is lower than the first temperature; and
heating the nucleating particles to the second temperature.
19. The method of claim 18 , wherein the first precursor gas mixture comprises SiCl 4 or SiH 2 Cl 2 .
20. The method of claim 19 , wherein the second precursor gas mixture comprises SiH 4 or Si2H 6 .
21. The method of claim 18 , wherein the first temperature is above 800° C.
22. The method of claim 21 , wherein the second temperature is between 300° C. and 500° C.
23. The method of claim 18 , wherein said contacting of the nucleating particles with the second precursor gas mixture is performed prior to said heating to the second temperature.
24. The method of claim 18 , wherein the first and second precursor gas mixtures each comprise one or more dopant gases.
25. The method of claim 18 , wherein said heating of the nucleating particles to a first temperature is performed after the nucleating particles are contacted with the first precursor gas mixture.
26. A method for harvesting nanowires, comprising:
(a) providing a substrate material having one or more nanowires attached to a top surface;
(b) providing a transfer substrate oriented above the top surface of the substrate;
(c) applying pressure to the transfer substrate by contacting a top surface of the transfer substrate with a probe, such that the transfer substrate is brought in contact with the one or more nanowires;
(d) transferring one or more of the nanowires from the substrate to the transfer substrate; and
(e) removing the transfer substrate.
27. The method of claim 26 , wherein the transfer substrate is a flexible polymer.
28. The process of claim 26 , wherein the transfer substrate comprises an adhesive layer on a bottom surface of the transfer substrate.
29. The method of claim 26 , further comprising heating the probe prior to and/or during (c).
30. The method of claim 26 , further comprising heating the substrate prior to and/or during (c).
31. The method of claim 26 , wherein (c) comprises applying pressure to the transfer substrate by contacting the top surface of the transfer substrate two or more times with the probe.
32. The method of claim 26 , wherein (c) comprises applying substantially uniform pressure to the transfer substrate.
33. The process of claim 32 , further comprising heating the substrate prior to (c) or during (c).
34. The method of claim 26 , further comprising aligning the one or more nanowires prior to (b).
35. The method of claim 34 , wherein said aligning comprising aligning the one or more nanowires using an electric field.
36. The method of claim 26 , wherein the transfer substrate comprises one or more device contacts.
37. The method of claim 26 , further comprising depositing one or more device contacts on the harvested nanowires.
38. A method for harvesting nanowires, comprising:
a) providing a substrate material having one or more nanowires attached to a top surface;
(b) providing a transfer substrate oriented above the top surface of the substrate;
(c) applying substantially uniform pressure to the transfer substrate by forming a vacuum between the transfer substrate and the substrate, such that the transfer substrate is brought in contact with one or more nanowires;
(d) transferring one or more of the nanowires from the substrate to the transfer substrates; and
(e) removing the transfer substrate.