Vertical cavity surface emitting laser optimized for optical sensitivity
View Patent ↗A vertical cavity surface emitting laser (VCSEL) optimized for use in self mixing applications. The VCSEL generally includes a bottom distributed Bragg reflector (DBR) mirror formed on a substrate. An active region is formed on the bottom mirror. A top DBR mirror is formed on the active region. A trench is formed in the at least the top mirror. An aperture is oxidized into the VCSEL. At least one of the bottom DBR mirror, the top DBR mirror, the metal contacts, the trench, and/or the aperture is optimized to make the VCSEL more optically sensitive to light reflected back into the VCSEL.
1. An electrical device, comprising:
a laser doppler velocimeter comprising a semiconductor laser and being configured to measure movement of an object relative to the semiconductor laser, wherein the semiconductor laser includes:
a bottom DBR mirror formed on a substrate;
an active region formed on the bottom mirror;
a top DBR mirror formed on the active region;
contacts electrically coupled to the active region; and
wherein the bottom DBR mirror comprises an upper portion and a lower portion, the upper portion being disposed closer to the active region than the lower portion, the upper portion and the lower portion comprising alternating high and low index of refraction layers, the low index of refraction layers in the upper portion comprising non-binary semiconductor materials and the low index of refraction layers in the lower portion comprising binary semiconductor materials.
2. The device of claim 1 , wherein the top mirror is optimized for self-mixing applications by reducing doping in alternating layers of the top mirror to increase translucence of the top mirror.
3. The device of claim 1 , wherein the semiconductor laser further comprises a dielectric layer on the top DBR mirror that reduces reflectivity of the top mirror to allow light to be reflected back into the VCSEL, the dielectric layer having a
2
n
+
1
4
λ
thickness of about where n is an integer and λ is the wavelength of design for the laser.
4. The device of claim 1 , wherein the semiconductor laser further comprises a T 0 optimized for self-mixing applications.
5. The device of claim 1 , wherein at least one of the bottom DBR mirror, the top DBR mirror, and the contacts are formed so as to make the VCSEL more thermally sensitive to changes in current through the VCSEL.
6. An electronic device for use in laser Doppler velocimetry applications, the device comprising:
a sensor configured to measure movement of an object relative to a VCSEL, the VCSEL comprised of:
a bottom DBR mirror formed on a substrate;
an active region formed on the bottom mirror;
a top DBR mirror formed on the active region;
metal contacts coupled to the active region; and
wherein the bottom DBR mirror comprises an upper portion and a lower portion, the upper portion being disposed closer to the active region than the lower portion, the upper portion and the lower portion comprising alternating high and low index of refraction layers, the low index of refraction layers in the upper portion comprising non-binary semiconductor materials and the low index of refraction layers in the lower portion comprising binary semiconductor materials.
7. An optical mouse comprising an electronic device as set forth in claim 6 .
8. A telephone handset comprising an electronic device as set forth in claim 6 .
9. A paper positioning device comprising an electronic device as set forth in claim 6 .
10. A linear measurement device comprising an electronic device as set forth in claim 6 .
11. The linear measurement device of claim 10 , wherein the linear measurement device is configured to measure a length of fish tape.
12. An appliance comprising an electronic device as set forth in claim 6 .