Integrated diode in a silicon chip scale package
An optical component with integrated back monitor photodiode. The optical component includes a substrate doped with a first type dopant, such as an n-type dopant. The substrate has a trench with sloped walls. An optical source is disposed in the trench. An implant of a second type dopant, such as a p-type dopant, is in the substrate around at a least a portion of the optical source. The implant in the substrate in combination with the first type dopant in the substrate forms a diode.
1. An optical component comprising:
a substrate including a top surface with a trench having a bottom surface and one or more side walls defined by the substrate;
an optical source disposed within the trench at the bottom surface and between the one or more side walls;
a monitor photodiode disposed within the trench at the bottom surface and between the one or more side walls and at least partially surrounding the optical source in the trench and positioned adjacent to the optical source so as to be configured to receive a reflected portion of an optical output from the optical source; and
a lens covering the trench, wherein the lens is positioned over the optical source and the monitor photodiode.
2. The optical component of claim 1 , further comprising an isolation implant around the optical source and the monitor photodiode to electrically isolate the optical source and the monitor photodiode.
3. The optical component of claim 1 , further comprising a shallow trench around the optical source and the monitor photodiode to electrically isolate the optical source and the monitor photodiode.
4. The optical component of claim 1 , wherein the optical source is a discrete component epoxied to the bottom surface of the trench.
5. The optical component of claim 1 , wherein the optical source is an epitaxial structure epitaxially grown on the substrate within the trench.
6. The optical component of claim 1 , wherein the substrate is GaAs.
7. The optical component of claim 1 , wherein the lens hermetically seals the trench.
8. The optical component of claim 7 , wherein the hermetic seal is provided by a fusion bond.
9. The optical component of claim 7 , wherein the hermetic seal is provided by a solder.
10. The optical component of claim 1 , wherein a portion of the substrate in the trench is doped with an n-type dopant and the monitor photodiode includes a p-type dopant implanted in the n-type doped portion of the substrate.
11. The optical component of claim 1 , wherein a portion of the substrate in the trench is doped with a p-type dopant and the monitor photodiode includes an n-type dopant implanted in the p-type doped portion of the substrate.
12. The optical component of claim 1 , wherein the trench has sloped walls.
13. A chip scale wafer comprising:
a substrate including a top surface with a plurality of trenches formed therein, each trench having a bottom surface and one or more side walls defined by the substrate;
an optical source disposed within each of the trenches at the bottom surface and between the one or more side walls;
a plurality of monitor photodiodes, each monitor photodiode disposed within a trench of the plurality of trenches at the bottom surface and between the one or more side walls and at least partially surrounding a corresponding one of the optical sources in the corresponding trench and positioned adjacent to the corresponding one of the optical sources; and
a lens covering each trench, wherein each lens is positioned over a corresponding one of the optical sources, and each monitor photodiode is positioned and configured to receive a reflected portion of an optical output of a corresponding one of the optical sources.
14. The chip scale wafer of claim 13 , wherein a sheet of glass disposed over the trenches forms the lens covering each trench and is coupled to the substrate so as to seal the trenches.
15. An optical component comprising:
a substrate comprising a top surface having a trench with an opening formed therein, the trench having a bottom surface and one or more side walls defined by the substrate;
a glass lens attached to the top surface and covering the opening of the trench;
an optical source epitaxially grown in the trench at the bottom surface and between the one or more side walls; and
a monitor photodiode epitaxially grown in the bottom surface of the trench between the one or more side walls, wherein the monitor photodiode is in areas at least partially surrounding the optical source and optically coupled to the optical source for receiving optical power from the optical source via a reflected optical path.