Light emitting devices
Light-emitting devices, and related components, systems and methods are disclosed.
1 - 36 . (canceled)
37 . A device, comprising:
a multi-layer stack comprising:
a quantum well containing region;
a reflective layer supported by the quantum well containing region;
a gold-containing layer supported by the reflective layer; and
a bonding layer supported by the gold-containing layer.
38 . The method of claim 37 , further comprising an n-doped layer supporting the quantum well containing region.
39 . The device of claim 37 , wherein the multi-layer stack further comprises a p-doped layer between the quantum-well containing region and the reflective layer.
40 . The device of claim 37 , wherein the multi-layer stack further comprises an ohmic contact layer between the p-doped layer and the reflective layer.
41 . The device of claim 37 , wherein the multi-layer stack further comprises a diffusion barrier layer between the reflective layer and the gold-containing layer.
42 . The device of claim 37 , wherein the multi-layer stack further comprises a current spreading layer between the n-doped layer and the quantum well containing region.
43 . The device of claim 37 , wherein the bonding layer is in direct contact with the gold-containing layer.
44 . The device of claim 37 , wherein the device is a device selected from the group consisting of light-emitting diodes, lasers, optical amplifiers, and combinations thereof.
45 . The device of claim 37 , wherein the device comprises a light emitting diode.
46 . The device of claim 37 , wherein the device is a device selected from the group consisting of OLEDs, flat surface-emitting LEDs, HBLEDs, and combinations thereof.
47 . A device, comprising:
a multi-layer stack comprising:
a substrate;
a quantum well containing region supported by the substrate;
a reflective layer supported by the quantum well containing region; and
a gold-containing layer supported by the reflective layer.
48 . The device of claim 47 , wherein the multi-layer stack further comprises an n-doped layer between the substrate and the quantum-well containing region.
49 . The device of claim 47 , wherein the multi-layer stack further comprises a p-doped layer between the quantum-well containing region and the reflective layer.
50 . The device of claim 59 , wherein the multi-layer stack further comprises an ohmic contact layer between the p-doped layer and the reflective layer.
51 . The device of claim 47 , wherein the multi-layer stack further comprises a diffusion barrier layer between the reflective layer and the gold-containing layer.
52 . The device of claim 48 , wherein the multi-layer stack further comprises a buffer layer between the substrate and the n-doped layer.
53 . The device of claim 48 , wherein the multi-layer stack further comprises a current spreading layer between the n-doped layer and the quantum well containing region.
54 . The device of claim 47 , wherein the multi-layer stack comprises first and second multi-layer stacks bonded with each other.
55 . The device of claim 54 , wherein the second multi-layer stack comprises:
a submount; and
a bonding layer supported by the submount.
56 . The device of claim 55 , wherein the second multi-layer stack further comprises a contact layer between the submount and the bonding layer.
57 . The device of claim 55 , wherein the bonding layer is in direct contact with the gold-containing layer.