IP Library › Patent Application 11118806
Patent Application
App. No. 11/118,806

Light emitting devices

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Patent No.
US None
App. No.
11/118,806
Abstract

Light-emitting devices; and related components, systems and methods are disclosed.

Claims (29)

1 - 36 . (canceled)

37 . A method, comprising:

bonding a first multi-layer stack with a second multi-layer stack, wherein:

the first multi-layer stack comprises:

a submount; and

a bonding layer supported by the submount; and

the second multi-layer stack comprises:

a substrate; and

a quantum-well containing region supported by the substrate.

38 . The method of claim 37 , wherein the second multi-layer stack further comprises an n-doped layer between the substrate and the quantum-well containing region.

39 . The method of claim 37 , wherein the second multi-layer stack further comprises a p-doped layer supported by the quantum-well containing region.

40 . The method of claim 39 , wherein the second multi-layer stack further comprises an ohmic contact layer supported by the p-doped layer.

41 . The method of claim 39 , wherein the second multi-layer stack further comprises a reflective layer supported by the p-doped layer.

42 . The method of claim 41 , wherein the second multi-layer stack further comprises a diffusion barrier layer supported by the reflective layer layer.

43 . The method of claim 41 , wherein the second multi-layer stack further comprises a gold-containing layer supported by the diffusion barrier layer.

44 . The method of claim 40 , wherein the second multi-layer stack further comprises a reflective layer supported by the ohmic contact layer.

45 . The method of claim 37 , wherein the first multi-layer stack further comprises a contact layer between the submount and the bonding layer.

46 . The method of claim 37 , wherein the first multi-layer stack further comprises a gold-containing layer between the submount and the bonding layer.

47 . The method of claim 37 , further comprising annealing the first multi-layer stack prior to bonding the first multi-layer stack to the second multi-layer stack.

48 . The method of claim 47 , wherein annealing the first multi-layer stack comprises annealing the first multi-layer stack at a temperature from about 300 degrees Celsius to about 600 degrees Celsius.

49 . The method of claim 47 , wherein annealing the first multi-layer stack comprises annealing the first multi-layer stack for about 30 seconds to about 300 seconds.

50 . The method of claim 37 , further comprising annealing the second multi-layer stack prior to bonding the first multi-layer stack with the second multi-layer stack.

51 . The method of claim 50 , wherein annealing the second multi-layer stack comprises annealing the second multi-layer stack at a temperature from about 350 degrees Celsius to about 500 degrees Celsius.

52 . The method of claim 50 , wherein annealing the second multi-layer stack comprises annealing the second multi-layer stack for about 30 seconds to about 300 seconds.

53 . The method of claim 37 , wherein the bonding layer comprises tin.

54 . The method of claim 37 , wherein the bonding layer comprises a gold/tin alloy.

55 . The method of claim 43 , wherein the bonding layer comprises gold.

56 . The method of claim 43 , wherein bonding the first multi-layer stack with the second multi-layer stack comprises bonding the bonding layer with the gold containing layer.

57 . The method of claim 37 , further comprising processing the bonded first and second multilayer stacks to form a light emitting device.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 22, 2005
From: ERCHAK, ALEXEI A.; GRAFF, JOHN W.; BROWN, MICHAEL GREGORY; DUNCAN, SCOTT W.
To: LUMINUS DEVICES, INC.
Reel/Frame 016839/0031 →