Solid-state imaging device and manufacturing method thereof
View Patent ↗The present invention aims to provide a solid-state imaging device that enables miniaturization of camera while maintaining the level of electrostatic damage resistance in the solid-state imaging device, and includes: an imaging unit 100 that transfers signal charge generated by performing photoelectric conversion on incident light, converts the signal charge into an electric signal, and outputs the electric signal as an image signal; and a peripheral circuit portion 110 which includes: a signal electrode pad 111 ; a power supply electrode pad 112 ; and a protection circuit 113 that has diodes 320 and 330 placed in opposition, and that discharges static electricity entering from the exterior, to the power supply electrode pad 112.
1. A CCD solid-state imaging device, comprising:
a semiconductor substrate;
an imaging unit formed in said semiconductor substrate, said imaging unit including (i) a photoelectric conversion unit operable to photo-electrically convert incident light into signal charge, said imaging unit being operable to transfer the signal charge generated by said photoelectric conversion unit, and (ii) a transfer electrode;
a signal electrode pad connected to said transfer electrode for supplying a positive voltage pulse and a negative voltage pulse to said transfer electrode;
a power supply electrode pad for supplying a power supply voltage which is equal to or higher than the positive voltage; and
a first diode for protecting said imaging unit,
wherein a cathode of said first diode is connected to said power supply electrode pad, and an anode of said first diode is connected to said signal electrode pad.
2. The CCD solid-state imaging device according to claim 1 ,
wherein the anode of said first diode is a first P-type impurity region formed by injecting impurity into said semiconductor substrate, and
the cathode of said first diode is a first N-type impurity region formed by injecting impurity into said semiconductor substrate.
3. The CCD solid-state imaging device according to claim 2 , further comprising a second diode,
wherein a cathode of said second diode is connected to the cathode of said first diode, and an anode of said second diode is connected to ground.
4. The CCD solid-state imaging device according to claim 3 ,
wherein the anode of said second diode is a second P-type impurity region formed by injecting impurity into said semiconductor substrate, and
the cathode of said second diode is the first N-type impurity region.
5. The CCD solid-state imaging device according to claim 1 , further comprising an amplifier transistor formed on said semiconductor substrate,
wherein said amplifier transistor amplifies the transferred signal charge, and
said amplifier transistor is connected to said power supply electrode pad.
6. The CCD solid-state imaging device according to claim 1 , further comprising a second diode,
wherein a cathode of said second diode is connected to the cathode of said first diode, and an anode of said second diode is connected to ground.