Radiation-emitting and/or -receiving semiconductor component and method for the patterned application of a contact to a semiconductor body

1. A method for the patterned application of a contact to a semiconductor body, which has an active zone intended for radiation generation, a lateral main direction of extent and a main area, such method comprising the steps of:

a) forming the semiconductor body;

b) applying a current expansion layer on the main area of the semiconductor body;

c) applying a protective layer on the current expansion layer;

d) forming a mask over the protective layer, a structure of said mask determining a lateral dimensioning of a contact region and the lateral dimensions of the contact;

e) removing the protective layer in the contact region determined by the mask; and

f) arranging at least one contact material for the contact in the contact region using the mask, said contact being laterally spaced apart from the protective layer.

2. The method as claimed in claim 1 , wherein the protective layer is removed by wet-chemical etching in step e).

3. The method as claimed in claim 1 , wherein the thickness of the current expansion layer is less than or equal to 50 nm.

4. The method as claimed in claim 1 , wherein the thickness of the current expansion layer is equal to or greater than 1 nm.

5. The method as claimed in claim 1 , wherein the protective layer is formed as an antiscratch layer for the current expansion layer.

6. The method as claimed in claim 1 , wherein the semiconductor body comprises at least one III-V semiconductor material.

7. The method as claimed in claim 1 , wherein the method forms the contact for at least one of a radiation-emitting component and receiving semiconductor component, such component comprising:

the semiconductor body, which includes the active zone intended for radiation generation, the lateral main direction of extent and the main area, and the protective layer arranged on the main area and the contact arranged on the main area,

wherein the protective layer is spaced apart from the contact in the lateral direction.

8. The method as claimed in claim 6 , wherein the active zone of the semiconductor body comprises the at least one III-V semiconductor material.

9. The method as claimed in claim 8 , wherein the at least one III-V semiconductor material is from the semiconductor material systems In x Ga y Al 1-x-y P, In x Ga y Al 1-x-y N or In x Ga y Al 1-x-y As, where 0≦x ≦1, 0 ≦y≦1 and x +y ≦1.

10. The method as claimed in claim 1 , wherein the current expansion layer comprises one of a metal, an alloy and a transparent conductive oxide material.

11. The method as claimed in claim 1 , wherein the lateral spacing is less than or equal to 45 μm and greater than or equal to 0.5 μm.